{"title":"基于100nm GaN技术的新型32gb /s 5.6 vpp数模转换器,用于5G信号生成","authors":"M. Weiß, C. Friesicke, R. Quay, O. Ambacher","doi":"10.1109/IMS30576.2020.9224080","DOIUrl":null,"url":null,"abstract":"The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"952-955"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation\",\"authors\":\"M. Weiß, C. Friesicke, R. Quay, O. Ambacher\",\"doi\":\"10.1109/IMS30576.2020.9224080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.\",\"PeriodicalId\":6784,\"journal\":{\"name\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"volume\":\"37 1\",\"pages\":\"952-955\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMS30576.2020.9224080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9224080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation
The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.