{"title":"分子束外延制备掺铒CaF2平面波导的2.8μm发射特性","authors":"E. Daran, D. Shepherd, T. Schweizer","doi":"10.1364/cleo_europe.1998.cthf7","DOIUrl":null,"url":null,"abstract":"The wavelength range near 3μm has many applications in medical processes due to an overlap with the absorption spectrum of water. Emission of the Er3+ ion near 2.8μm, which operates on the transition from 4I11/2 to 4I13/2 is especially promising as it can be pumped by either 800nm GaAlAs or 980nm InGaAlAs diodes, paving the way for a compact device with low electrical energy consumption.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2.8μm emission of Er-doped CaF2 planar waveguides fabricated by molecular beam epitaxy\",\"authors\":\"E. Daran, D. Shepherd, T. Schweizer\",\"doi\":\"10.1364/cleo_europe.1998.cthf7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The wavelength range near 3μm has many applications in medical processes due to an overlap with the absorption spectrum of water. Emission of the Er3+ ion near 2.8μm, which operates on the transition from 4I11/2 to 4I13/2 is especially promising as it can be pumped by either 800nm GaAlAs or 980nm InGaAlAs diodes, paving the way for a compact device with low electrical energy consumption.\",\"PeriodicalId\":10610,\"journal\":{\"name\":\"Conference on Lasers and Electro-Optics Europe\",\"volume\":\"22 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Lasers and Electro-Optics Europe\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleo_europe.1998.cthf7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Lasers and Electro-Optics Europe","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleo_europe.1998.cthf7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2.8μm emission of Er-doped CaF2 planar waveguides fabricated by molecular beam epitaxy
The wavelength range near 3μm has many applications in medical processes due to an overlap with the absorption spectrum of water. Emission of the Er3+ ion near 2.8μm, which operates on the transition from 4I11/2 to 4I13/2 is especially promising as it can be pumped by either 800nm GaAlAs or 980nm InGaAlAs diodes, paving the way for a compact device with low electrical energy consumption.
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