Pub Date : 2002-08-06DOI: 10.1109/cleoe.1996.562058
J. Graf, H. Sautter, R. Bosch, B. Zeitz, H. Krug, H. Schmidt
A new kind of optical material with a high potential for various high quality low cost devices has been optimized and applicated for optical waveguides. In order to meet the requirements of thermal and long-term stability inorganic and organic components were combined in an optical material consisting of a stable inorganic backbone and an additional organic modification with polymerizable organic groupings.
{"title":"Low loss waveguides from inorganic-organic composites","authors":"J. Graf, H. Sautter, R. Bosch, B. Zeitz, H. Krug, H. Schmidt","doi":"10.1109/cleoe.1996.562058","DOIUrl":"https://doi.org/10.1109/cleoe.1996.562058","url":null,"abstract":"A new kind of optical material with a high potential for various high quality low cost devices has been optimized and applicated for optical waveguides. In order to meet the requirements of thermal and long-term stability inorganic and organic components were combined in an optical material consisting of a stable inorganic backbone and an additional organic modification with polymerizable organic groupings.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87494270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-06DOI: 10.1109/CLEOE.1994.636242
M. Falconieri, A. Lanzi, G. Salvetti, A. Toncelli
Thulium-sensitized holmium lasers have proved to be very attractive, efficient infrared radiation sources in eye-safe spectral regions. Following to Tm 3H4 excitation of interest for optical pumping with commercially available diode-laser, transfer of energy to the Ho 5I7 upper laser level competes with a variety of interactions that may cause energy loss. The relative importance of the various processes is not very often considered, and still needs to be carefully analyzed. In this paper we describe our results of spectroscopic measurements carried out after Tm 3H4 excitation, in order to identify and evaluate the main de-excitation mechanisms.
{"title":"Spectroscopic investigation of the visible and infrared emission in Tm, Ho-doped YAG and YLF crystals","authors":"M. Falconieri, A. Lanzi, G. Salvetti, A. Toncelli","doi":"10.1109/CLEOE.1994.636242","DOIUrl":"https://doi.org/10.1109/CLEOE.1994.636242","url":null,"abstract":"Thulium-sensitized holmium lasers have proved to be very attractive, efficient infrared radiation sources in eye-safe spectral regions. Following to Tm 3H4 excitation of interest for optical pumping with commercially available diode-laser, transfer of energy to the Ho 5I7 upper laser level competes with a variety of interactions that may cause energy loss. The relative importance of the various processes is not very often considered, and still needs to be carefully analyzed. In this paper we describe our results of spectroscopic measurements carried out after Tm 3H4 excitation, in order to identify and evaluate the main de-excitation mechanisms.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"16 1","pages":"132-133"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83962963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-06DOI: 10.1109/EQEC.1996.561565
K. Ebeling
Semiconductor lasers have made exciting progress in performance over the last few years with prospective applications e.g. in optical communications and data storage, metrology, display technology, material processing, or solid state laser pumping. The short wavelength limit of semiconductor laser emission has now been pushed to 410 nm using GaN based devices. High power broad area lasers in the well established InAlGaAs material system offer several 10 W continuous output power at power conversion efficiencies above 60%. Beam profile control is obtained in hybrid or monolithic master oscillator power amplifier (MOPA) configurations. Communication laser diodes show small signal current modulation bandwidths 40 GHz and are applied for 20 Gbit/s data transmission. Extremely low laser threshold currents of less than 10µA as well as more than 50% conversion efficiency at 1 mW output power are reported from novel selectively oxidized vertical cavity surface emitting laser diodes (VCSELs).
{"title":"Semiconductor Lasers: Recent Advancesand Prospects","authors":"K. Ebeling","doi":"10.1109/EQEC.1996.561565","DOIUrl":"https://doi.org/10.1109/EQEC.1996.561565","url":null,"abstract":"Semiconductor lasers have made exciting progress in performance over the last few years with prospective applications e.g. in optical communications and data storage, metrology, display technology, material processing, or solid state laser pumping. The short wavelength limit of semiconductor laser emission has now been pushed to 410 nm using GaN based devices. High power broad area lasers in the well established InAlGaAs material system offer several 10 W continuous output power at power conversion efficiencies above 60%. Beam profile control is obtained in hybrid or monolithic master oscillator power amplifier (MOPA) configurations. Communication laser diodes show small signal current modulation bandwidths 40 GHz and are applied for 20 Gbit/s data transmission. Extremely low laser threshold currents of less than 10µA as well as more than 50% conversion efficiency at 1 mW output power are reported from novel selectively oxidized vertical cavity surface emitting laser diodes (VCSELs).","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"89 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84388401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-06DOI: 10.1109/CLEOE.1994.635934
P. Peters, Q. Mei, W. Witteman
The technology of electrical discharge gas lasers has improved greatly in the last decade. High repetition rates excimer lasers with operating powers of 100-300 W are commercially available now. However results on the XeF (B→X) discharge excimer laser are scarce although e-beam pumping of this laser transition has been studied extensively. This certainly has to do with the increased probability of discharge instabilities in the NF3 or F2 doped laser gas mixtures compared to the HCl-doped gas mixtures for the competing XeCl excimer laser under the same pumping conditions. With the use of new and powerful excitation techniques these problems are addressed.
{"title":"Improvements in a gas discharge XeF (B->X) laser","authors":"P. Peters, Q. Mei, W. Witteman","doi":"10.1109/CLEOE.1994.635934","DOIUrl":"https://doi.org/10.1109/CLEOE.1994.635934","url":null,"abstract":"The technology of electrical discharge gas lasers has improved greatly in the last decade. High repetition rates excimer lasers with operating powers of 100-300 W are commercially available now. However results on the XeF (B→X) discharge excimer laser are scarce although e-beam pumping of this laser transition has been studied extensively. This certainly has to do with the increased probability of discharge instabilities in the NF3 or F2 doped laser gas mixtures compared to the HCl-doped gas mixtures for the competing XeCl excimer laser under the same pumping conditions. With the use of new and powerful excitation techniques these problems are addressed.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"83 1","pages":"62-62"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85276355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A high speed two dimensional (2D) bar-code detection system (BCDS) with two visible-light laser diodes (LDs) driven by a complementary light emission (CLE) method and by a pulse modulation one with bias current (PMBC), has been newly developed to realize highspeed scanning. The CLE method enables a high effective scanning speed, while still retaining the size of the 2D BCDS small. And also, the PMBC method enables a high-frequency drive of LDs, that is. high-speed scanning. This paper experimentarily demonstrates the effectiveness of these CLE and PMBC drive methods.
{"title":"High Speed Two Dimensional Bar Code Detection System","authors":"H. Wakaumi, C. Nagasawa","doi":"10.1117/12.406387","DOIUrl":"https://doi.org/10.1117/12.406387","url":null,"abstract":"A high speed two dimensional (2D) bar-code detection system (BCDS) with two visible-light laser diodes (LDs) driven by a complementary light emission (CLE) method and by a pulse modulation one with bias current (PMBC), has been newly developed to realize highspeed scanning. The CLE method enables a high effective scanning speed, while still retaining the size of the 2D BCDS small. And also, the PMBC method enables a high-frequency drive of LDs, that is. high-speed scanning. This paper experimentarily demonstrates the effectiveness of these CLE and PMBC drive methods.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2000-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87887157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-07DOI: 10.1364/cleo_europe.1998.cpd1.8
A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, C. Agert, M. Hofrmann, W. Rühle, W. Stolz
Vertical-cavity surface-emitting lasers (VCSELs) are interesting devices for applications in high speed optical fiber networks. Therefore the development of VCSEL structures for the generation of short optical pulses at emission wavelengths in the optical-fiber windows of 1.3 or 1.55 µm is important. The InGaAsP-InP material system which is most common for edge emitters in this long wavelength regime suffers from the lack of epitaxial layers with high refractive index difference. Thus an appropriate distributed Bragg Reflector (DBR) can only be obtained with a large number of mirror layers. This involves not only a high resistance in electrically pumped devices, but also increases the effective cavity length which results in slower dynamics, due to longer photon lifetimes. In contrast, GaInNAs has been demonstrated recently as a very attractive active material for the long wavelength regime. It can be grown lattice matched on GaAs and thus allows to use well established GaAs-AlAs DBRs. We have realized a microcavity laser with GaInNAs quantum wells with a high enough content of nitrogen to reach wavelengths near 1.28 µm. Here we present first results on the picosecond dynamics of a GaInNAs VCSEL-structure.
垂直腔面发射激光器(VCSELs)是应用于高速光纤网络的有趣器件。因此，在1.3µm或1.55µm的光纤窗口中，开发用于产生发射波长短光脉冲的VCSEL结构是非常重要的。InGaAsP-InP材料系统是最常见的边缘发射器在这个长波长范围内遭受缺乏具有高折射率差的外延层。因此，只有大量的镜像层才能获得合适的分布式布拉格反射器(DBR)。这不仅涉及电泵浦器件中的高电阻，而且还增加了有效腔长度，由于光子寿命更长，导致动力学变慢。相反，GaInNAs最近被证明是一种非常有吸引力的长波长活性材料。它可以在GaAs上生长晶格匹配，从而允许使用良好的GaAs- alas dbr。我们已经实现了一种具有氮含量足够高的GaInNAs量子阱的微腔激光器，其波长接近1.28µm。在这里，我们提出了GaInNAs vcsel结构的皮秒动力学的第一个结果。
{"title":"Emission dynamics of a (GaIn)(NAs) vertical-cavity surface-emitting laser","authors":"A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, C. Agert, M. Hofrmann, W. Rühle, W. Stolz","doi":"10.1364/cleo_europe.1998.cpd1.8","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cpd1.8","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs) are interesting devices for applications in high speed optical fiber networks. Therefore the development of VCSEL structures for the generation of short optical pulses at emission wavelengths in the optical-fiber windows of 1.3 or 1.55 µm is important. The InGaAsP-InP material system which is most common for edge emitters in this long wavelength regime suffers from the lack of epitaxial layers with high refractive index difference. Thus an appropriate distributed Bragg Reflector (DBR) can only be obtained with a large number of mirror layers. This involves not only a high resistance in electrically pumped devices, but also increases the effective cavity length which results in slower dynamics, due to longer photon lifetimes. In contrast, GaInNAs has been demonstrated recently as a very attractive active material for the long wavelength regime. It can be grown lattice matched on GaAs and thus allows to use well established GaAs-AlAs DBRs. We have realized a microcavity laser with GaInNAs quantum wells with a high enough content of nitrogen to reach wavelengths near 1.28 µm. Here we present first results on the picosecond dynamics of a GaInNAs VCSEL-structure.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"89 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2000-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81230558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Burlot-Loison, J. Doualan, P. Boulanger, T. Han, H. Gallagher, R. Moncorgé, G. Boulon
Excited state absorption (ESA) has been investigated in Er3+ -doped LiNbO3 after pumping in the 4I13/2 level. Because of its long lifetime (3 ms), the 4I13/2 Er3+ ion level can show an important absorption towards higher energy levels. Especially. 4I13/2 → 4I9/2 ESA takes place not so far from the eye-safe 4I13/2 → 4I15/2 emission (maximum at 1530 nm) and can then reduce the laser performances.
{"title":"Excited-State Absorption of Er3+-Doped LinbO3","authors":"R. Burlot-Loison, J. Doualan, P. Boulanger, T. Han, H. Gallagher, R. Moncorgé, G. Boulon","doi":"10.1063/1.370326","DOIUrl":"https://doi.org/10.1063/1.370326","url":null,"abstract":"Excited state absorption (ESA) has been investigated in Er3+ -doped LiNbO3 after pumping in the 4I13/2 level. Because of its long lifetime (3 ms), the 4I13/2 Er3+ ion level can show an important absorption towards higher energy levels. Especially. 4I13/2 → 4I9/2 ESA takes place not so far from the eye-safe 4I13/2 → 4I15/2 emission (maximum at 1530 nm) and can then reduce the laser performances.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1999-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84873854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-04-01DOI: 10.1364/cleo_europe.1998.cpd2.12
M. Mosbacher, V. Dobler, J. Boneberg, P. Leiderer
As the structures on microelectronic chips are getting smaller and smaller, reaching the region of a hundred nanometers, the removal of submicroscopic particle contaminants on wafer surfaces becomes of increasing importance. Due to the strong influence of adhesion forces on small particles the conventional cleaning methods such as are inefficient. Recently it has been demonstrated that particles down to diameters of 200nm can efficiently be removed by laser cleaning [1].
{"title":"Comparison of the efficiencies of dry and steam laser cleaning of silicon surfaces","authors":"M. Mosbacher, V. Dobler, J. Boneberg, P. Leiderer","doi":"10.1364/cleo_europe.1998.cpd2.12","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cpd2.12","url":null,"abstract":"As the structures on microelectronic chips are getting smaller and smaller, reaching the region of a hundred nanometers, the removal of submicroscopic particle contaminants on wafer surfaces becomes of increasing importance. Due to the strong influence of adhesion forces on small particles the conventional cleaning methods such as are inefficient. Recently it has been demonstrated that particles down to diameters of 200nm can efficiently be removed by laser cleaning [1].","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1999-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83655906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Obaton, J. Bernard, C. Parent, G. L. Flem, C. Labbé, P. Boulanger, G. Boulon
We are involved in Yb3+-Er3+-codoped phosphate glass research for eye-safe laser source near 1535 nm, wavelength corresponding to the 4I13/2→4I15/2 Er3+ transition [1]. Undoped and doped glasses of the composition La2O3-Li2O-P2O5, with LaLiP4O12 formula, have been synthesised.
{"title":"Synthesis and Spectroscopic Investigations of Yb3+-Er3+-Codoped LaLiP4O12 Glasses Relevant for Laser Applications.","authors":"A. Obaton, J. Bernard, C. Parent, G. L. Flem, C. Labbé, P. Boulanger, G. Boulon","doi":"10.1051/EPJAP:1998276","DOIUrl":"https://doi.org/10.1051/EPJAP:1998276","url":null,"abstract":"We are involved in Yb3+-Er3+-codoped phosphate glass research for eye-safe laser source near 1535 nm, wavelength corresponding to the 4I13/2→4I15/2 Er3+ transition [1]. Undoped and doped glasses of the composition La2O3-Li2O-P2O5, with LaLiP4O12 formula, have been synthesised.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"149 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77493340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-01DOI: 10.1016/S0030-4018(98)00348-4
T. Rothacher, W. Lüthy, H. Weber
{"title":"Diode pumping and laser properties of Yb:Ho:YAG at 2 µm operated at room temperature in active mirror mode","authors":"T. Rothacher, W. Lüthy, H. Weber","doi":"10.1016/S0030-4018(98)00348-4","DOIUrl":"https://doi.org/10.1016/S0030-4018(98)00348-4","url":null,"abstract":"","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74689073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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