{"title":"250Mb/s至3Gb/s单侧连续速率CDR,采用精密频率检测器和1/5速率线性相位检测器","authors":"N. Trung, P. Häfliger","doi":"10.1109/ISCAS.2011.5937531","DOIUrl":null,"url":null,"abstract":"This paper describes a 250-Mb/s to 3Gb/s continuous rate clock and data recovery (CDR) circuit in the TSMC 90nm CMOS process. The circuit first recovers the precise clock frequency from bit-serial 27−1 pseudorandom binary-sequences (PRBS) across a wide range of data rates. Thus, the requirements for loop bandwidth and locking range is much relaxed for the second step of phase detection, implemented as a 1/5 rate linear phase detector (PD) offering reduced clock operating frequency and low jitter. The CDR achieves 12.6-ps peak-to-peak jitter at 2.5Gb/s and consumes a current of 3.84mA in post-layout simulation.","PeriodicalId":91083,"journal":{"name":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","volume":"13 2 1","pages":"181-184"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"250Mb/s to 3Gb/s unilateral continuous rate CDR using precise frequency detector and 1/5-rate linear phase detector\",\"authors\":\"N. Trung, P. Häfliger\",\"doi\":\"10.1109/ISCAS.2011.5937531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a 250-Mb/s to 3Gb/s continuous rate clock and data recovery (CDR) circuit in the TSMC 90nm CMOS process. The circuit first recovers the precise clock frequency from bit-serial 27−1 pseudorandom binary-sequences (PRBS) across a wide range of data rates. Thus, the requirements for loop bandwidth and locking range is much relaxed for the second step of phase detection, implemented as a 1/5 rate linear phase detector (PD) offering reduced clock operating frequency and low jitter. The CDR achieves 12.6-ps peak-to-peak jitter at 2.5Gb/s and consumes a current of 3.84mA in post-layout simulation.\",\"PeriodicalId\":91083,\"journal\":{\"name\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"volume\":\"13 2 1\",\"pages\":\"181-184\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2011.5937531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2011.5937531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
250Mb/s to 3Gb/s unilateral continuous rate CDR using precise frequency detector and 1/5-rate linear phase detector
This paper describes a 250-Mb/s to 3Gb/s continuous rate clock and data recovery (CDR) circuit in the TSMC 90nm CMOS process. The circuit first recovers the precise clock frequency from bit-serial 27−1 pseudorandom binary-sequences (PRBS) across a wide range of data rates. Thus, the requirements for loop bandwidth and locking range is much relaxed for the second step of phase detection, implemented as a 1/5 rate linear phase detector (PD) offering reduced clock operating frequency and low jitter. The CDR achieves 12.6-ps peak-to-peak jitter at 2.5Gb/s and consumes a current of 3.84mA in post-layout simulation.