{"title":"用导电铁磁银铁复合材料填充硅通孔","authors":"C. Lu, Kerwin Wang","doi":"10.1109/NEMS.2014.6908828","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"23 1","pages":"366-369"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Filling through-silicon vias with conductive ferromagnetic silver-iron composite\",\"authors\":\"C. Lu, Kerwin Wang\",\"doi\":\"10.1109/NEMS.2014.6908828\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.\",\"PeriodicalId\":22566,\"journal\":{\"name\":\"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"23 1\",\"pages\":\"366-369\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2014.6908828\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2014.6908828","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
介绍了一种新型铁磁复合材料的磁致注入制备导电硅通孔的方法。通过吸引磁力填充导电铁磁性复合材料。这种复合材料是由银和铁纳米粒子的混合物制成的。SU-8 2002通过低真空吸盘作为绝缘材料覆盖在通孔侧壁上。经热固化处理后,介质层的电场可高达5×106 V/cm。所有的制造步骤都在100℃以下完成,tsv可以允许电流密度为6×107 a /m2。在50v时漏电流为2×10-6 A。直流电烧结后,各TSV的电阻均小于0.85 Ω。
Filling through-silicon vias with conductive ferromagnetic silver-iron composite
This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.