S. Najda, P. Perlin, T. Suski, S. Stanczyk, A. Kafar, M. Leszczynski, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A. Kelly, M. Knapp, M. Haji
{"title":"用于冷原子传感、光学原子钟和精密计量的氮化镓激光二极管","authors":"S. Najda, P. Perlin, T. Suski, S. Stanczyk, A. Kafar, M. Leszczynski, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A. Kelly, M. Knapp, M. Haji","doi":"10.1117/12.2632992","DOIUrl":null,"url":null,"abstract":"Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the U.V. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for quantum sensors such as optical clocks and cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s21S0-5p1P1] cooling transition in neutral strontium clocks at 461 nm and the [5s2s1/2 – 6p2P3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.","PeriodicalId":52940,"journal":{"name":"Security and Defence Quarterly","volume":"8 1","pages":"122740O - 122740O-9"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaN laser diodes for cold-atom sensing, optical atomic clocks and precision metrology\",\"authors\":\"S. Najda, P. Perlin, T. Suski, S. Stanczyk, A. Kafar, M. Leszczynski, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A. Kelly, M. Knapp, M. Haji\",\"doi\":\"10.1117/12.2632992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the U.V. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for quantum sensors such as optical clocks and cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s21S0-5p1P1] cooling transition in neutral strontium clocks at 461 nm and the [5s2s1/2 – 6p2P3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.\",\"PeriodicalId\":52940,\"journal\":{\"name\":\"Security and Defence Quarterly\",\"volume\":\"8 1\",\"pages\":\"122740O - 122740O-9\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Security and Defence Quarterly\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2632992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Security and Defence Quarterly","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2632992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN laser diodes for cold-atom sensing, optical atomic clocks and precision metrology
Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the U.V. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for quantum sensors such as optical clocks and cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s21S0-5p1P1] cooling transition in neutral strontium clocks at 461 nm and the [5s2s1/2 – 6p2P3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.