光谱椭偏法研究硅片快速热加工对其光学特性的影响

IF 0.2 Q4 INSTRUMENTS & INSTRUMENTATION Devices and Methods of Measurements Pub Date : 2022-10-24 DOI:10.21122/2220-9506-2022-13-3-199-207
V. Solodukha, U. A. Pilipenko, A. Omelchenko, D. V. Shestovski
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引用次数: 0

摘要

提高硅表面性能的可能途径之一是在化学机械抛光后,应用秒脉冲快速热处理使表面硅层固相再结晶。本文用光谱椭偏法研究了不同掺杂水平和网状密度的初始硅片的快速热处理对其光学特性的影响。利用光谱椭偏法研究了不同掺杂水平对初始硅片(KDB12取向、KDB10取向和KDB0.005取向)的快速热处理影响以及网状密度对其光学特性:折射率和吸收比的影响。确定了快速热处理前后硅网密度对其光学特性的影响。结果表明,与低掺杂硅相比,高硼含量硅样品经过快速热处理后,布里渊区中心的折射和吸收比降低。在最大吸收峰区域,对应于电子从硅表面出口的能量(4.34 eV),高掺杂硅的折射率指数比低掺杂硅的折射率指数更高,这是由硅表面在该光谱范围内的空载流子浓度高决定的。结果表明,在3.59 ~ 4.67 eV的光谱范围内,对应出硅表面的电子所做的功,最能反映出不同取向硅的3个光学参数的差异,而评价硅掺杂水平对其光学特性的影响,最能反映出3.32 ~ 4.34 eV的光谱范围。
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Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics
One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is investigation of influence of the rapid thermal treatment of the initial silicon wafers of the various doping level and reticular density on their optical characteristics by means of the spectral ellipsometry method.The investigation results are presented by means of the spectral ellipsometry method of the rapid thermal processing influence on the initial silicon wafers (KDB12 orientation <100>, KDB10 orientation <111> and KDB0.005 orientation <100>) of the various level of doping and reticular density influence on their optical characteristics: refraction and absorption ratios. Influence was confirmed of the silicon reticular density on its optical characteristics before and after the rapid thermal processing. It was shown, that reduction of the refraction and absorption ratios in the center of the Brillouin zone for the silicon samples with the high Boron concentration after the rapid thermal processing as compared with the low doped silicon. In the area of the maximum absorption peak, corresponding to the energy of the electron exit from the silicon surface (4.34 eV) the refraction indicator of the high doped silicon becomes higher, than of the low doped silicon, which is determined by the high concentration of the vacant charge carriers on the silicon surface in this spectral range.It was established, that the spectral area 3.59–4.67 eV, corresponding to the work of the electrons, exiting the silicon surface, the most informative way shows the difference of the 3 optical parameters of silicon of the different orientation, and for evaluation of influence of the silicon doping level on its optical characteristics the most informative is the spectral range of 3.32–4.34 eV. 
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来源期刊
Devices and Methods of Measurements
Devices and Methods of Measurements INSTRUMENTS & INSTRUMENTATION-
自引率
25.00%
发文量
18
审稿时长
8 weeks
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