Pub Date : 2024-07-23DOI: 10.21122/2220-9506-2024-15-2-142-150
U. A. Pilipenko, A. A. Sergeichik, D. V. Shestovski, V. A. Solodukha
Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing disturbances in crystal lattice emerging after ion implantation. However the crystal structure of mechanically disturbed layer on wafer planar side is still unclear. Researches by transmission electronic method, analysis of diffraction reflection curve and electronic Auger spectroscopy has failed to provide reliable data about the state of crystal lattice in surface layer of at least 30 nm thickness. Hence it was impossible to suggest a model of solid phase recrystallization and to present its mathematical description. The goals of the work were as follows: – identify of silicon crystal lattice state in surface layer of 30 nm thickness before and after rapid thermal treatment by backward reflected electrons diffraction method using raw Si wafers surface; – analysis of contamination element composition on the surface of raw silicon before and after rapid thermal treatment; – model development for solid phase recrystallization of surface disturbed layer after rapid thermal treatment and its mathematical description. Images of back ward reflected electrons diffraction using surface layer of raw silicon wafers' of 30 nm thickness and also the results of the planar surface of raw silicon wafers' cleaning from impurities are provided. Processes reducing the activating energy of mechanically disturbed silicon layer recrystallization process were suggested and its mathematical description was provided. Parameters of rapid thermal treatment mitigating the thermal impact on silicon wafer for recrystallization of mechanically disturbed layer on its planar surface ware defined.
{"title":"Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment","authors":"U. A. Pilipenko, A. A. Sergeichik, D. V. Shestovski, V. A. Solodukha","doi":"10.21122/2220-9506-2024-15-2-142-150","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-142-150","url":null,"abstract":"Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing disturbances in crystal lattice emerging after ion implantation. However the crystal structure of mechanically disturbed layer on wafer planar side is still unclear. Researches by transmission electronic method, analysis of diffraction reflection curve and electronic Auger spectroscopy has failed to provide reliable data about the state of crystal lattice in surface layer of at least 30 nm thickness. Hence it was impossible to suggest a model of solid phase recrystallization and to present its mathematical description. The goals of the work were as follows: – identify of silicon crystal lattice state in surface layer of 30 nm thickness before and after rapid thermal treatment by backward reflected electrons diffraction method using raw Si wafers surface; – analysis of contamination element composition on the surface of raw silicon before and after rapid thermal treatment; – model development for solid phase recrystallization of surface disturbed layer after rapid thermal treatment and its mathematical description. Images of back ward reflected electrons diffraction using surface layer of raw silicon wafers' of 30 nm thickness and also the results of the planar surface of raw silicon wafers' cleaning from impurities are provided. Processes reducing the activating energy of mechanically disturbed silicon layer recrystallization process were suggested and its mathematical description was provided. Parameters of rapid thermal treatment mitigating the thermal impact on silicon wafer for recrystallization of mechanically disturbed layer on its planar surface ware defined.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141810786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-131-141
V. A. Alekseev, A. V. Usoltseva, V. Usoltsev, S. I. Yuran
Experimental studies of the surface of non-metallic materials have been carried out to determine the roughness parameters of materials such as leather, bone, wood, plastic after processing the surface of materials with a laser beam. To assess the quality of the surface layer of materials, the depth of penetration of laser radiation into the material, the average value of the micro unevenness, and the mean square deviation of the micro unevenness were used. To describe the changes in the values of the micro unevenness, graphs of the correlation of the parameters of the micro unevenness and the modulus of elasticity of the surface of various non-metallic materials were used. Approximating polynomials are used to describe the correlations with the representation in a computer. A regression model is proposed that relates the properties of the material to the magnitude of the micro unevenness. Data on the depth of ablation for wood, bone, leather, plexiglass are presented, graphs of the correlation between the amount of surface micro unevenness and the density of materials, between the amount of surface micro-roughness and the modulus of elasticity of materials, the correlation coefficient between the amount of surface micro unevenness and the ignition temperature of organic materials. The obtained models make it possible to implement the proposed principle of laser processing of non-metallic materials, which consists in measuring the modulus of elasticity of the surface of the material and, based on the measurements obtained, control the modes of laser processing of products. The installation of laser surface treatment of non-metallic materials with the implementation of the principle of control of processing modes depending on the measured values of the modulus of elasticity of the surface of the material is proposed. To measure the elastic modulus of a material, a special sensor is used with indentation of the indenter and computer evaluation of the measurements obtained with the formation of solutions for controlling the modes of laser surface treatment of the material. The experimental results obtained made it possible to manufacture a number of products to ensure a given surface quality of non-metallic materials (a writing device, a gift for the newlyweds). Conducting experiments with changes in the power of laser radiation based on the results of measuring the modulus of elasticity of the surface of non-metallic materials has shown the effectiveness of operational setting of laser operating modes to ensure the quality of the surface of non-metallic materials.
{"title":"Assessment of Surface Roughness of Non-Metallic Materials during Laser Processing","authors":"V. A. Alekseev, A. V. Usoltseva, V. Usoltsev, S. I. Yuran","doi":"10.21122/2220-9506-2024-15-2-131-141","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-131-141","url":null,"abstract":"Experimental studies of the surface of non-metallic materials have been carried out to determine the roughness parameters of materials such as leather, bone, wood, plastic after processing the surface of materials with a laser beam. To assess the quality of the surface layer of materials, the depth of penetration of laser radiation into the material, the average value of the micro unevenness, and the mean square deviation of the micro unevenness were used. To describe the changes in the values of the micro unevenness, graphs of the correlation of the parameters of the micro unevenness and the modulus of elasticity of the surface of various non-metallic materials were used. Approximating polynomials are used to describe the correlations with the representation in a computer. A regression model is proposed that relates the properties of the material to the magnitude of the micro unevenness. Data on the depth of ablation for wood, bone, leather, plexiglass are presented, graphs of the correlation between the amount of surface micro unevenness and the density of materials, between the amount of surface micro-roughness and the modulus of elasticity of materials, the correlation coefficient between the amount of surface micro unevenness and the ignition temperature of organic materials. The obtained models make it possible to implement the proposed principle of laser processing of non-metallic materials, which consists in measuring the modulus of elasticity of the surface of the material and, based on the measurements obtained, control the modes of laser processing of products. The installation of laser surface treatment of non-metallic materials with the implementation of the principle of control of processing modes depending on the measured values of the modulus of elasticity of the surface of the material is proposed. To measure the elastic modulus of a material, a special sensor is used with indentation of the indenter and computer evaluation of the measurements obtained with the formation of solutions for controlling the modes of laser surface treatment of the material. The experimental results obtained made it possible to manufacture a number of products to ensure a given surface quality of non-metallic materials (a writing device, a gift for the newlyweds). Conducting experiments with changes in the power of laser radiation based on the results of measuring the modulus of elasticity of the surface of non-metallic materials has shown the effectiveness of operational setting of laser operating modes to ensure the quality of the surface of non-metallic materials.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141814017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-104-109
U. A. Pilipenko, N. S. Kovalchuk, D. V. Shestovski, D. V. Zhyhulin
Energy dispersive X-ray microanalysis is one of the main methods for determining the elemental composition of matter. Possessing high locality and a relatively shallow penetration depth of the electron beam (< 1 μm), this method has found wide application in the field of microelectronics, as the main method for analyzing the elemental composition of matter. The method allows to study the surface of a substance both pointwise and over an area with the construction of element distribution maps. In the paper we investigated the influence of long-term and rapid heat treatments on the formation of the aluminum-polysilicon interface in order to study the formation of ohmic contacts in the element base of integrated circuits. The aluminumpolysilicon interface was studied using energy-dispersive X-ray microanalysis. It has been established that during long-term thermal annealing (450 °C, 20 min) polysilicon is completely dissolved in aluminum followed by its segregation in the form of separate agglomerates in the aluminum film, which can lead to a complete failure of the integrated circuit. During rapid thermal annealing (450 °C, 7 s) such a phenomenon was not detected. Thus it is advisable to use rapid thermal annealing as an alternative to traditional long-term thermal annealing in microelectronics. This makes it possible to significantly reduce the dissolution of polysilicon in aluminum, avoid the destruction of ohmic contacts and increase the percentage of yield of workable 0products in the process of integrated circuits' manufacturing.
能量色散 X 射线显微分析是确定物质元素组成的主要方法之一。这种方法具有高定位性和相对较浅的电子束穿透深度（< 1 μm），作为分析物质元素组成的主要方法，已在微电子领域得到广泛应用。这种方法可以通过绘制元素分布图对物质表面进行点状研究和区域研究。在本文中，我们研究了长期和快速热处理对铝-多晶硅界面形成的影响，以研究集成电路元件基底欧姆接触的形成。我们使用能量色散 X 射线显微分析法对铝多晶硅界面进行了研究。研究发现，在长期热退火（450 °C，20 分钟）过程中，多晶硅会完全溶解在铝中，然后以独立团块的形式偏析到铝膜中，从而导致集成电路完全失效。而在快速热退火过程中（450 °C，7 秒）则没有发现这种现象。因此，在微电子学中使用快速热退火替代传统的长期热退火是可取的。这样可以大大减少多晶硅在铝中的溶解，避免欧姆触点的破坏，提高集成电路制造过程中可加工 0 产品的产量百分比。
{"title":"Energy-Dispersive X-Ray Microanalysis – as a Method for Study the Aluminium-Polysilicon Interface after Exposure with Long-Term and Rapid Thermal Annealing","authors":"U. A. Pilipenko, N. S. Kovalchuk, D. V. Shestovski, D. V. Zhyhulin","doi":"10.21122/2220-9506-2024-15-2-104-109","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-104-109","url":null,"abstract":"Energy dispersive X-ray microanalysis is one of the main methods for determining the elemental composition of matter. Possessing high locality and a relatively shallow penetration depth of the electron beam (< 1 μm), this method has found wide application in the field of microelectronics, as the main method for analyzing the elemental composition of matter. The method allows to study the surface of a substance both pointwise and over an area with the construction of element distribution maps. In the paper we investigated the influence of long-term and rapid heat treatments on the formation of the aluminum-polysilicon interface in order to study the formation of ohmic contacts in the element base of integrated circuits. The aluminumpolysilicon interface was studied using energy-dispersive X-ray microanalysis. It has been established that during long-term thermal annealing (450 °C, 20 min) polysilicon is completely dissolved in aluminum followed by its segregation in the form of separate agglomerates in the aluminum film, which can lead to a complete failure of the integrated circuit. During rapid thermal annealing (450 °C, 7 s) such a phenomenon was not detected. Thus it is advisable to use rapid thermal annealing as an alternative to traditional long-term thermal annealing in microelectronics. This makes it possible to significantly reduce the dissolution of polysilicon in aluminum, avoid the destruction of ohmic contacts and increase the percentage of yield of workable 0products in the process of integrated circuits' manufacturing.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141815005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-110-119
P. Serenkov, V. Romanchak, A. V. Hrybkouski, Серенков П.С Белорусский, П.С. Серенков, В.М. Романчак, А.В. Грибковский
The problem of increasing the reliability of uncertainty estimation of measurement results is considered. The purpose of this work was to justify the application of the process approach to the formation of the algorithm of uncertainty estimation on the basis of morphological analysis. It is theoretically substantiated that from the standpoint of the system approach to achieving an acceptable degree of reliability of measurement uncertainty estimates it is necessary to implement a process approach to the formation of the estimation method as an algorithm of actions. The main stages of the estimation process are defined. It is established that each stage of the estimation process can be realized by alternative methods. The morphological box method as a realization of morphological analysis is proposed as a basis for its solution. A morphological box design of the uncertainty estimation process with an open architecture is presented, based only on commonly accepted methods and approaches for realizing each step of the process. Two aspects of the application of the morphological box method are identified. On the one hand, the morphological box allows to form an algorithm of the uncertainty assessment process, maximally acceptable for the laboratory conditions, as a combination of process steps, based on the task at hand, combining different variants of realization of these steps. On the other hand, the morphological box acts as a tool for development of new methods of realization of various stages of the uncertainty assessment process. Examples of using the morphological box method to develop alternative algorithms of the uncertainty estimation process of the same measurement method and to develop new methods of realization of different stages of the estimation process are considered.
{"title":"A Morphological Approach to Development of a Process for Measurement Uncertainty Estimation","authors":"P. Serenkov, V. Romanchak, A. V. Hrybkouski, Серенков П.С Белорусский, П.С. Серенков, В.М. Романчак, А.В. Грибковский","doi":"10.21122/2220-9506-2024-15-2-110-119","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-110-119","url":null,"abstract":"The problem of increasing the reliability of uncertainty estimation of measurement results is considered. The purpose of this work was to justify the application of the process approach to the formation of the algorithm of uncertainty estimation on the basis of morphological analysis. It is theoretically substantiated that from the standpoint of the system approach to achieving an acceptable degree of reliability of measurement uncertainty estimates it is necessary to implement a process approach to the formation of the estimation method as an algorithm of actions. The main stages of the estimation process are defined. It is established that each stage of the estimation process can be realized by alternative methods. The morphological box method as a realization of morphological analysis is proposed as a basis for its solution. A morphological box design of the uncertainty estimation process with an open architecture is presented, based only on commonly accepted methods and approaches for realizing each step of the process. Two aspects of the application of the morphological box method are identified. On the one hand, the morphological box allows to form an algorithm of the uncertainty assessment process, maximally acceptable for the laboratory conditions, as a combination of process steps, based on the task at hand, combining different variants of realization of these steps. On the other hand, the morphological box acts as a tool for development of new methods of realization of various stages of the uncertainty assessment process. Examples of using the morphological box method to develop alternative algorithms of the uncertainty estimation process of the same measurement method and to develop new methods of realization of different stages of the estimation process are considered.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141814487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-87-94
A. Soldatov, A. Soldatov, M. Kostina, A. Abouellail, Костина М.А Национальный исследовательский Томский, А.И. Солдатов, А.А. Солдатов, М.А. Костина, А.А. Абуеллаиль
The article describes experience of practical application of the differential thermoelectric tester "THERMO FITNESS TESTING". Description of the sensor design and results of differential thermoelectromotive force measurement for a large group of metals widely used in Russia are given. Usage of the "THERMO FITNESS TESTING" device to test the quality of R6M5 steel heat treatment is described. Dependence of thermoelectromotive force on the heating temperature which can be used for practical purposes was obtained. Usage the "THERMO FITNESS TESTING" to measure the thickness of a cemented (carburized) layer of 12KH2N4А steel is considered. Dependence of the thermoelectromotive force on the thickness of the cementation layer was also obtained.
{"title":"Hands-on Experience of THERMO FITNESS TESTING Device Use for Thermoelectric Evaluation of Metallic Materials","authors":"A. Soldatov, A. Soldatov, M. Kostina, A. Abouellail, Костина М.А Национальный исследовательский Томский, А.И. Солдатов, А.А. Солдатов, М.А. Костина, А.А. Абуеллаиль","doi":"10.21122/2220-9506-2024-15-2-87-94","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-87-94","url":null,"abstract":"The article describes experience of practical application of the differential thermoelectric tester \"THERMO FITNESS TESTING\". Description of the sensor design and results of differential thermoelectromotive force measurement for a large group of metals widely used in Russia are given. Usage of the \"THERMO FITNESS TESTING\" device to test the quality of R6M5 steel heat treatment is described. Dependence of thermoelectromotive force on the heating temperature which can be used for practical purposes was obtained. Usage the \"THERMO FITNESS TESTING\" to measure the thickness of a cemented (carburized) layer of 12KH2N4А steel is considered. Dependence of the thermoelectromotive force on the thickness of the cementation layer was also obtained.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-95-103
V. Vasilevich, M. Y. Zbyshinskaya
Accurate and reliable measurements of the total solar radiation flux make it possible to evaluate the efficiency of using stand-alone photovaltaic systems in various meteorological conditions. These measurements allow more accurately predict in time the energy production volume, accumulator and capacitive storage devices parameters and the payback period. Research purpose was to study the possibility of creating a photoelectric sensor and a method of uninterrupted measurement based on this sensor which allows to measure total solar radiation flux including its direct, diffused and reflected components simultaneously. The photovaltaic sensor with bifacial photosensitivity was manufactured and applied, which is low-inertia comparing to traditional thermoelectric pyranometers, and its spectral sensitivity is quite close to the same parameter of photovoltaic power supply system. It creates the possibility to estimate the insolation level capable to be completely converted into electrical energy without an ineffective heat-generating long-wavelength part of the solar spectrum. A laboratory measuring stand was made to test the sensor's operability. Modeling and experiments’ the sensor parameters were carried out and confirmed its operability. The bifacial photosensitivity sensor allows to control simultaneously direct, diffused and reflected from the earth's surface components of solar radiation, what gives more complete information about the energy potential of the photovoltaic power supply system location.
{"title":"Bifacial Photovоltaic Sensor for Insolation Energy Resource Monitoring","authors":"V. Vasilevich, M. Y. Zbyshinskaya","doi":"10.21122/2220-9506-2024-15-2-95-103","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-95-103","url":null,"abstract":"Accurate and reliable measurements of the total solar radiation flux make it possible to evaluate the efficiency of using stand-alone photovaltaic systems in various meteorological conditions. These measurements allow more accurately predict in time the energy production volume, accumulator and capacitive storage devices parameters and the payback period. Research purpose was to study the possibility of creating a photoelectric sensor and a method of uninterrupted measurement based on this sensor which allows to measure total solar radiation flux including its direct, diffused and reflected components simultaneously. The photovaltaic sensor with bifacial photosensitivity was manufactured and applied, which is low-inertia comparing to traditional thermoelectric pyranometers, and its spectral sensitivity is quite close to the same parameter of photovoltaic power supply system. It creates the possibility to estimate the insolation level capable to be completely converted into electrical energy without an ineffective heat-generating long-wavelength part of the solar spectrum. A laboratory measuring stand was made to test the sensor's operability. Modeling and experiments’ the sensor parameters were carried out and confirmed its operability. The bifacial photosensitivity sensor allows to control simultaneously direct, diffused and reflected from the earth's surface components of solar radiation, what gives more complete information about the energy potential of the photovoltaic power supply system location.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141814391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.21122/2220-9506-2024-15-2-120-130
P. Bogdan, E. Zaytseva, A. I. Stepanenko
The difference in the spectral composition of artificial and natural lighting can negatively affect health, as well as lead to a distorted perception of the color of surrounding objects. At the same time, a certain correction of the spectral composition of visible radiation in medical institutions and workplaces has a positive effect on human health, while can be carried lighting control out taking into account the data of personal sensor devices that determine the human condition. The purpose of the research was to select criteria for comparing natural and LED optical and visible radiation by spectral composition and by the visibility of color differences in natural and LED lighting. The effectiveness of the application of known and developed criteria for assessing the difference in the spectral composition of optical and visible radiation from natural and LED sources was investigated, as well as for the visibility of color differences in natural and LED lighting. To minimize the values of criteria are proposed additive and subtractive methods for calculating LED parameters. Their comparison allowed us to conclude that a more complex calculation algorithm, but higher performance for an additive technique than for a subtractive one with the same minimization results.It was found that to simulate the spectral composition of natural radiation using LEDs, it is most effective to use the criteria "standard deviations of the relative differences between the optical and visible spectral components of natural and LED radiation". A comparison of the criteria for the visibility of color differences in natural and LED lighting showed approximately the same effectiveness of using the criteria "small color differences" and "standard deviation by photoreceptors" at the present stage and the prospects for applying the second criterion, provided that its acceptable values are established.
人工照明和自然光的光谱组成差异会对健康产生负面影响，并导致对周围物体颜色的感知失真。同时，在医疗机构和工作场所对可见辐射的光谱成分进行一定的校正，对人体健康有积极的影响，同时可以根据确定人体状况的个人传感设备的数据进行照明控制。研究的目的是选择标准，通过光谱组成以及自然照明和 LED 照明中颜色差异的可见度，对自然照明和 LED 光辐射和可见光辐射进行比较。研究了应用已知和已开发的标准来评估天然光源和 LED 光源的光学和可见辐射的光谱组成差异以及天然照明和 LED 照明的颜色差异可见度的有效性。为了使标准值最小化，提出了计算 LED 参数的加法和减法。通过比较，我们得出结论：在相同的最小化结果下，加法计算算法更复杂，但加法技术比减法技术性能更高。研究发现，使用 LED 来模拟自然辐射的光谱成分，使用 "自然辐射和 LED 辐射的光学和可见光谱成分之间相对差异的标准偏差 "这一标准最为有效。对天然照明和 LED 照明的色差可见度标准进行比较后发现，在现阶段使用 "小色差 "和 "光感受器标准偏差 "标准的效果大致相同，如果第二个标准的可接受值确定下来，则其应用前景广阔。
{"title":"Investigation of Criteria for Comparing of Natural and LED Radiation Spectral Distribution","authors":"P. Bogdan, E. Zaytseva, A. I. Stepanenko","doi":"10.21122/2220-9506-2024-15-2-120-130","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-2-120-130","url":null,"abstract":"The difference in the spectral composition of artificial and natural lighting can negatively affect health, as well as lead to a distorted perception of the color of surrounding objects. At the same time, a certain correction of the spectral composition of visible radiation in medical institutions and workplaces has a positive effect on human health, while can be carried lighting control out taking into account the data of personal sensor devices that determine the human condition. The purpose of the research was to select criteria for comparing natural and LED optical and visible radiation by spectral composition and by the visibility of color differences in natural and LED lighting. The effectiveness of the application of known and developed criteria for assessing the difference in the spectral composition of optical and visible radiation from natural and LED sources was investigated, as well as for the visibility of color differences in natural and LED lighting. To minimize the values of criteria are proposed additive and subtractive methods for calculating LED parameters. Their comparison allowed us to conclude that a more complex calculation algorithm, but higher performance for an additive technique than for a subtractive one with the same minimization results.It was found that to simulate the spectral composition of natural radiation using LEDs, it is most effective to use the criteria \"standard deviations of the relative differences between the optical and visible spectral components of natural and LED radiation\". A comparison of the criteria for the visibility of color differences in natural and LED lighting showed approximately the same effectiveness of using the criteria \"small color differences\" and \"standard deviation by photoreceptors\" at the present stage and the prospects for applying the second criterion, provided that its acceptable values are established.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.2,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-12DOI: 10.21122/2220-9506-2024-15-1-18-29
I. A. Taratyn, O. Reutskaya, G. G. Gorokh, I. V. Serdyuk, V. S. Fedosenko
Strict requirements for determining of gases concentration in the working environment it is relevant to develop of semiconductor sensors which provide rapid response and safety of personnel in industrial and domestic premises. The aim of the work was to study gas-sensitive and dynamic characteristics of high-sensitive low-power sensors made on thin nanoporous substrates with gas-sensitive layers of semiconductor metal oxides. The low-power semiconductor gas sensor on the anodic alumina substrate has been developed. Sensors with gas-sensitive semiconductor metal oxide layers based on In2O3+Ga2O3, In2O3+SnO2 and SnO2+Pd deposited from aqueous solutions with subsequent firing on sensor information electrodes are manufactured. Studies of gas-sensitive characteristics have shown that sensors with SnO2 films with the addition of Pd nanoparticles have maximum sensitivity of about 85 % and high response rate to 10 ppm H2 at 410 °C. The maximum sensitivity of 250 % to 10 ppm CO at 220 °C was shown by films based on In2O3+SnO2, the response time τ90 was 5 s, while the sensitivity of In2O3+Ga2O3 and SnO2+Pd was 30–50 % at 410–420 ºC. Semiconducting metal oxides In2O3+Ga2O3 (70 % at 420 °C) and In2O3+SnO2 (30 % at 250 °C) showed lower sensitivity to hydrogen, with response time τ90 = 20 s. The sensors power consumption in all measurements was 28–60 mW. Semiconductor gas sensors with low energy consumption can be used in the systems development that monitor the carbon monoxide concentration in the work area, as well as detect ignition's early stages.
{"title":"Gas-Sensitive Characteristics of Low-Power Semiconductor Gas Sensors to CO and H2","authors":"I. A. Taratyn, O. Reutskaya, G. G. Gorokh, I. V. Serdyuk, V. S. Fedosenko","doi":"10.21122/2220-9506-2024-15-1-18-29","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-1-18-29","url":null,"abstract":"Strict requirements for determining of gases concentration in the working environment it is relevant to develop of semiconductor sensors which provide rapid response and safety of personnel in industrial and domestic premises. The aim of the work was to study gas-sensitive and dynamic characteristics of high-sensitive low-power sensors made on thin nanoporous substrates with gas-sensitive layers of semiconductor metal oxides. The low-power semiconductor gas sensor on the anodic alumina substrate has been developed. Sensors with gas-sensitive semiconductor metal oxide layers based on In2O3+Ga2O3, In2O3+SnO2 and SnO2+Pd deposited from aqueous solutions with subsequent firing on sensor information electrodes are manufactured. Studies of gas-sensitive characteristics have shown that sensors with SnO2 films with the addition of Pd nanoparticles have maximum sensitivity of about 85 % and high response rate to 10 ppm H2 at 410 °C. The maximum sensitivity of 250 % to 10 ppm CO at 220 °C was shown by films based on In2O3+SnO2, the response time τ90 was 5 s, while the sensitivity of In2O3+Ga2O3 and SnO2+Pd was 30–50 % at 410–420 ºC. Semiconducting metal oxides In2O3+Ga2O3 (70 % at 420 °C) and In2O3+SnO2 (30 % at 250 °C) showed lower sensitivity to hydrogen, with response time τ90 = 20 s. The sensors power consumption in all measurements was 28–60 mW. Semiconductor gas sensors with low energy consumption can be used in the systems development that monitor the carbon monoxide concentration in the work area, as well as detect ignition's early stages.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140711628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-12DOI: 10.21122/2220-9506-2024-15-1-60-67
V. Lapitskaya, T. Kuznetsova, S. Chizhik
Crack resistance of two types of glass was studied – cover glass (0.17 mm thick) and slide glass (2 mm thick) using an improved technique through the use of the probe methods, which makes it possible to increase the accuracy of determining the crack resistance of glass. Colorless silicate glass was used. Crack resistance was determined by the Vickers pyramid indentation method. Microstructure of glasses surface and deformation region after indentation were studied using an atomic force microscope. Mechanical properties of glasses were determined by nanoindentation. Surface relief of a glass slide is rougher than that one of a cover glass. Roughness Rz for a cover glass is less than for a slide glass. Specific surface energy value of 0.26 N/m is higher for the slide glass compared to the coverslip. One elastic modulus value E of the cover glass is 48 GPa, and that one of the slide glass is 58 GPa. The microhardness value H is almost the same for by the glasses and amounts to 6.7 GPa for a slide glass and 6.4 GPa for a cover glass. Atomic force microscope images of deformation region after indentation with a Vickers pyramid show that the first cracks appear at a load of 1 N on the slide glass, and at 2 N on the cover glass. At a load of 3 N, the cover glass is destroyed. Based on the results of crack resistance calculations it was found that critical stress intensity coefficient KIC values are 1.42 MPa∙m1/2 for a glass slide, and 1.10 MPa∙m1/2 for a cover glass.
研究了两种玻璃的抗裂性--盖板玻璃（0.17 毫米厚）和玻片玻璃（2 毫米厚），通过使用探针法改进了技术，从而提高了确定玻璃抗裂性的准确性。使用的是无色硅酸盐玻璃。抗裂性是通过维氏金字塔压痕法测定的。使用原子力显微镜研究了玻璃表面和压痕后变形区域的微观结构。玻璃的机械性能是通过纳米压痕法测定的。玻璃片的表面凹凸比盖板玻璃的表面凹凸粗糙。盖板玻璃的粗糙度 Rz 小于玻片玻璃。与盖玻片相比，玻片的比表面能值 0.26 N/m更高。盖玻片的弹性模量值 E 为 48 GPa，而玻片的弹性模量值 E 为 58 GPa。两种玻璃的显微硬度值 H 几乎相同，玻片玻璃为 6.7 GPa，盖玻片玻璃为 6.4 GPa。用维氏金字塔压痕后变形区域的原子力显微镜图像显示，在载荷为 1 N 时，玻片玻璃出现了第一条裂缝，在载荷为 2 N 时，盖板玻璃出现了第一条裂缝。载荷为 3 N 时，盖板玻璃被破坏。根据抗裂计算的结果，我们发现玻璃载玻片的临界应力强度系数 KIC 值为 1.42 MPa∙m1/2，玻璃盖板的临界应力强度系数 KIC 值为 1.10 MPa∙m1/2。
{"title":"Determination of Crack Resistance of the Cover and Slide Glass by Indentation Method with the Visualization Using Atomic Force Microscopy","authors":"V. Lapitskaya, T. Kuznetsova, S. Chizhik","doi":"10.21122/2220-9506-2024-15-1-60-67","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-1-60-67","url":null,"abstract":"Crack resistance of two types of glass was studied – cover glass (0.17 mm thick) and slide glass (2 mm thick) using an improved technique through the use of the probe methods, which makes it possible to increase the accuracy of determining the crack resistance of glass. Colorless silicate glass was used. Crack resistance was determined by the Vickers pyramid indentation method. Microstructure of glasses surface and deformation region after indentation were studied using an atomic force microscope. Mechanical properties of glasses were determined by nanoindentation. Surface relief of a glass slide is rougher than that one of a cover glass. Roughness Rz for a cover glass is less than for a slide glass. Specific surface energy value of 0.26 N/m is higher for the slide glass compared to the coverslip. One elastic modulus value E of the cover glass is 48 GPa, and that one of the slide glass is 58 GPa. The microhardness value H is almost the same for by the glasses and amounts to 6.7 GPa for a slide glass and 6.4 GPa for a cover glass. Atomic force microscope images of deformation region after indentation with a Vickers pyramid show that the first cracks appear at a load of 1 N on the slide glass, and at 2 N on the cover glass. At a load of 3 N, the cover glass is destroyed. Based on the results of crack resistance calculations it was found that critical stress intensity coefficient KIC values are 1.42 MPa∙m1/2 for a glass slide, and 1.10 MPa∙m1/2 for a cover glass.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140710979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-12DOI: 10.21122/2220-9506-2024-15-1-50-59
A. Yasukevich, V. Kisel, E. Trusova, G. E. Rachkovskaya, G. B. Zakharevich, K. B. Podbolotov, V. S. Gurin
Optical glass ceramics based on oxyfluoride glasses activated by rare earth ions have attractive properties for development of lasers and near-infrared amplifiers, since they combine properties of fluoride crystals with low phonon frequencies and chemical and mechanical properties of oxide matrices. Spectroscopic properties of activator ions in crystalline and glass phases of glass-ceramics can differ significantly. Thus, it is possible to determine impurity ions’ distribution between these phases by means of absorption or luminescence spectra analysis. The main goal of this work was to develop a method for determining the concentration of Tm3+ and Ho3+ ions in the crystalline, PbF2 and glassy phases of glass ceramics after secondary thermal treatment of thulium-doped and thulium-holmium co-doped oxyfluoride glasses. Spectroscopic characteristics of oxyfluoride glasses activated by Tm3+ ions and co-activated by Tm3+ and Ho3+ ions, as well as glass ceramics obtained from the original glasses as a result of secondary heat treatment were studied. It was established by X-ray phase analysis method that under certain heat treatment conditions crystalline β-PbF2 phase is formed in those glasses. Absorption and luminescence spectra of Tm3+ and Ho3+ impurity ions in the original glass and in β-PbF2 crystals were compared with their ones in glass ceramics. A method for determining the concentration of ions in the crystalline and glass phases of glass ceramics was proposed on the basis of this comparison. Dependence of Tm3+ and Ho3+ ions distribution between the glass and crystalline phases on different regime of glasses' secondary heat treatment was studied.
{"title":"Determination of the Concentration of Tm3+ and Ho3+ Ions in the Glass and Crystalline Phases in Oxyfluoride Glass Ceramics by Absorption Spectra Analysis","authors":"A. Yasukevich, V. Kisel, E. Trusova, G. E. Rachkovskaya, G. B. Zakharevich, K. B. Podbolotov, V. S. Gurin","doi":"10.21122/2220-9506-2024-15-1-50-59","DOIUrl":"https://doi.org/10.21122/2220-9506-2024-15-1-50-59","url":null,"abstract":"Optical glass ceramics based on oxyfluoride glasses activated by rare earth ions have attractive properties for development of lasers and near-infrared amplifiers, since they combine properties of fluoride crystals with low phonon frequencies and chemical and mechanical properties of oxide matrices. Spectroscopic properties of activator ions in crystalline and glass phases of glass-ceramics can differ significantly. Thus, it is possible to determine impurity ions’ distribution between these phases by means of absorption or luminescence spectra analysis. The main goal of this work was to develop a method for determining the concentration of Tm3+ and Ho3+ ions in the crystalline, PbF2 and glassy phases of glass ceramics after secondary thermal treatment of thulium-doped and thulium-holmium co-doped oxyfluoride glasses. Spectroscopic characteristics of oxyfluoride glasses activated by Tm3+ ions and co-activated by Tm3+ and Ho3+ ions, as well as glass ceramics obtained from the original glasses as a result of secondary heat treatment were studied. It was established by X-ray phase analysis method that under certain heat treatment conditions crystalline β-PbF2 phase is formed in those glasses. Absorption and luminescence spectra of Tm3+ and Ho3+ impurity ions in the original glass and in β-PbF2 crystals were compared with their ones in glass ceramics. A method for determining the concentration of ions in the crystalline and glass phases of glass ceramics was proposed on the basis of this comparison. Dependence of Tm3+ and Ho3+ ions distribution between the glass and crystalline phases on different regime of glasses' secondary heat treatment was studied.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140710600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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