{"title":"基于腔辅助全光增益的单光子探测","authors":"C. Panuski, M. Pant, M. Heuck, D. Englund","doi":"10.1103/PhysRevB.99.205303","DOIUrl":null,"url":null,"abstract":"Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.","PeriodicalId":6498,"journal":{"name":"2018 Conference on Lasers and Electro-Optics (CLEO)","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Single-Photon Detection by Cavity-Assisted All-Optical Gain\",\"authors\":\"C. Panuski, M. Pant, M. Heuck, D. Englund\",\"doi\":\"10.1103/PhysRevB.99.205303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.\",\"PeriodicalId\":6498,\"journal\":{\"name\":\"2018 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"19 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1103/PhysRevB.99.205303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevB.99.205303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-Photon Detection by Cavity-Assisted All-Optical Gain
Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.
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