用于光刻的紧凑低电流x捏点EUV源

S. Hassan, E. Clark, A. Gopal, S. Minardi, C. Petridis, J. Chatzakis, G. Androulakis, M. Tatarakis, E. Baronova, V. Vikhrev, P. Lee
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引用次数: 0

摘要

我们介绍了一种能够产生50 kA左右的电流,上升时间为50 ns的小电流x夹脚机的结果。x针由两根直径5-10微米的电线制成。在13.5 nm处,EUV辐射的发射时间与导线中的电流对应不到10 ns,持续时间约为100 ns。利用激光影成像和时间积分图像获得了掐点的动力学细节,显示了低密度日冕等离子体的形成和演化。在几纳秒的上升时间内,极紫外光在压缩时的发射幅度增加了一倍。在时间分辨的EUV和x射线信号中观察到的多峰结构显示,在电流开始后的40 - 70 ns之间,根据电线直径的不同,会出现挤压和热点的形成。利用二维MHD程序模拟了低电流x -掐动在径向和轴向的动态变化。
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Compact low current X-pinch based EUV source for lithography
We present the results from low current X-pinch machine capable to produce the current around 50 kA with a rise time of 50 ns. The X-pinches were made from two 5-10 mum diameter wires. The emission of EUV radiation at 13.5 nm starts from less than 10 ns time corresponding to the current flow in the wires and lasts about 100 ns. Details of dynamics of the pinch were obtained from laser shadowgraphic and time integrated images, showing formation and evolution of low density coronal plasma. The emission of EUV becomes twice in amplitude at the time of pinching within few nanoseconds rise-time. The multiple peaked structure observed in time resolved EUV and x-rays signals show the pinching and the formation of hotspots between 40 - 70 ns after the start of the current, depending on the diameter of the wires. The dynamics of the low current X-pinch in the radial as well as in the axial direction were simulated using the 2D MHD code.
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