介电性能Bi₂MgTaNbO₉

IF 0.5 Q4 CHEMISTRY, MULTIDISCIPLINARY Journal of Siberian Federal University. Chemistry Pub Date : 2021-06-01 DOI:10.17516/1998-2836-0228
N. Sekushin, N. Zhuk
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引用次数: 1

摘要

采用陶瓷合成方法制备了一种具有焦绿石结构的Bi2MgNbTaO9相纯混合氧化物。采用x射线相、能谱分析、电子扫描显微镜等方法对样品进行了表征。用阻抗谱法研究了不同厚度样品的电学性能。单晶胞参数为a = 1.0544 nm (sp. gr. Fd3m)。通过对阻抗谱图的建模,提出了一个能令人满意地描述样品电学行为的等效电路。Bi2MgNbTaO9具有较高的活化能(1.28 eV);中等高介电常数~ 62-71,介电损耗正切~0.003在1 MHz和18°С。未检测到离子转移。所研究的陶瓷可用于制造多层陶瓷电容器
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Dielectric Properties Bi₂MgTaNbO₉
A phase-pure mixed oxide of the composition Bi2MgNbTaO9 with a pyrochlore structure was obtained by the ceramic synthesis method. The sample was characterized by the methods of X-ray phase and EDS analyzes, electron scanning microscopy. The electrical properties of samples of different thicknesses were investigated by impedance spectroscopy. The unit cell parameter is a = 1.0544 nm (sp. gr. Fd3m). As a result of modeling the impedance hodographs, an equivalent circuit is proposed that satisfactorily describes the electrical behavior of the sample. Bi2MgNbTaO9 is characterized by a high activation energy of 1.28 eV; moderately high dielectric constant ~62–71 and dielectric loss tangent ~0.003 at 1 MHz and 18 °С. No ionic transfer was detected. The investigated ceramics can be used to create multilayer ceramic capacitors
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CiteScore
1.10
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0.00%
发文量
13
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