集成光子学用氮化镓微激光器:波导极化子激光器和微磁盘激光器

T. Guillet
{"title":"集成光子学用氮化镓微激光器:波导极化子激光器和微磁盘激光器","authors":"T. Guillet","doi":"10.1117/12.2594565","DOIUrl":null,"url":null,"abstract":"The GaN photonic platform is of large interest for broadband integrated photonics applications, from near-UV to visible and near-IR. Here we present the latest developments in near-UV microlasers and their coupling to gratings and waveguides, based on GaN active layers. We demonstrate two iconic NUV microlasers: (i) a microdisk laser based on GaN/AlGaN quantum wells, coupled to a waveguide and an outcoupling grating; (ii) a ridge waveguide polariton laser operating with ultra-short Fabry-Perot ridge cavities (5-60µm), that is not governed by Bernard-Durrafourg condition (population inversion) as in standard ridge interband lasers. Both lasers operate around 380nm.","PeriodicalId":23471,"journal":{"name":"UV and Higher Energy Photonics: From Materials to Applications 2021","volume":"50 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaN microlasers for integrated photonics: waveguide polariton lasers and microdisk lasers\",\"authors\":\"T. Guillet\",\"doi\":\"10.1117/12.2594565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The GaN photonic platform is of large interest for broadband integrated photonics applications, from near-UV to visible and near-IR. Here we present the latest developments in near-UV microlasers and their coupling to gratings and waveguides, based on GaN active layers. We demonstrate two iconic NUV microlasers: (i) a microdisk laser based on GaN/AlGaN quantum wells, coupled to a waveguide and an outcoupling grating; (ii) a ridge waveguide polariton laser operating with ultra-short Fabry-Perot ridge cavities (5-60µm), that is not governed by Bernard-Durrafourg condition (population inversion) as in standard ridge interband lasers. Both lasers operate around 380nm.\",\"PeriodicalId\":23471,\"journal\":{\"name\":\"UV and Higher Energy Photonics: From Materials to Applications 2021\",\"volume\":\"50 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"UV and Higher Energy Photonics: From Materials to Applications 2021\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2594565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"UV and Higher Energy Photonics: From Materials to Applications 2021","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2594565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

GaN光子平台对宽带集成光子学应用具有很大的兴趣,从近紫外到可见和近红外。本文介绍了基于氮化镓有源层的近紫外微激光器及其与光栅和波导耦合的最新进展。我们展示了两个标志性的超低紫外微激光器:(i)基于GaN/AlGaN量子阱的微磁盘激光器,耦合到波导和解耦光栅;(ii)使用超短法布里-佩罗脊腔(5-60µm)的脊波导偏振子激光器,不像标准脊带间激光器那样受Bernard-Durrafourg条件(居群反转)的约束。两种激光器的工作波长都在380纳米左右。
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GaN microlasers for integrated photonics: waveguide polariton lasers and microdisk lasers
The GaN photonic platform is of large interest for broadband integrated photonics applications, from near-UV to visible and near-IR. Here we present the latest developments in near-UV microlasers and their coupling to gratings and waveguides, based on GaN active layers. We demonstrate two iconic NUV microlasers: (i) a microdisk laser based on GaN/AlGaN quantum wells, coupled to a waveguide and an outcoupling grating; (ii) a ridge waveguide polariton laser operating with ultra-short Fabry-Perot ridge cavities (5-60µm), that is not governed by Bernard-Durrafourg condition (population inversion) as in standard ridge interband lasers. Both lasers operate around 380nm.
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