半导体器件的兆赫脉冲功率

Weihua Jiang, T. Yokoo, K. Saiki, K. Hisayama, K. Narita, Ken Takayama, M. Wake, N. Shimizu
{"title":"半导体器件的兆赫脉冲功率","authors":"Weihua Jiang, T. Yokoo, K. Saiki, K. Hisayama, K. Narita, Ken Takayama, M. Wake, N. Shimizu","doi":"10.1109/PLASMA.2008.4591188","DOIUrl":null,"url":null,"abstract":"Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead of commonly used magnetic switch. The repetition rate has reached 500 kHz (burst) for output voltage pulse of 10 kV and pulse width of 15 ns (FWHM). A full-bridge switching unit using SIThy has been developed and tested for bipolar square voltage pulse generation of plusmn 2 kV for a 100-Omega load, at repetition rate of 1 MHz (burst). A stacked SiC-JFET switching unit consists of 4 devices (2S x 2P) has been operated for 2 kV and 20 A at repetition rate up to 5 MHz (burst). Important issues on switching characteristics, such as rise- time, heat loading, and balance between devices have been studied. The MHz-repetitive power modulators are expected to have various applications in the future, especially for high- energy accelerators and biological treatment.","PeriodicalId":6359,"journal":{"name":"2008 IEEE 35th International Conference on Plasma Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MHz pulsed power by semiconductor devices\",\"authors\":\"Weihua Jiang, T. Yokoo, K. Saiki, K. Hisayama, K. Narita, Ken Takayama, M. Wake, N. Shimizu\",\"doi\":\"10.1109/PLASMA.2008.4591188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead of commonly used magnetic switch. The repetition rate has reached 500 kHz (burst) for output voltage pulse of 10 kV and pulse width of 15 ns (FWHM). A full-bridge switching unit using SIThy has been developed and tested for bipolar square voltage pulse generation of plusmn 2 kV for a 100-Omega load, at repetition rate of 1 MHz (burst). A stacked SiC-JFET switching unit consists of 4 devices (2S x 2P) has been operated for 2 kV and 20 A at repetition rate up to 5 MHz (burst). Important issues on switching characteristics, such as rise- time, heat loading, and balance between devices have been studied. The MHz-repetitive power modulators are expected to have various applications in the future, especially for high- energy accelerators and biological treatment.\",\"PeriodicalId\":6359,\"journal\":{\"name\":\"2008 IEEE 35th International Conference on Plasma Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE 35th International Conference on Plasma Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PLASMA.2008.4591188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE 35th International Conference on Plasma Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2008.4591188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

利用半导体开路开关(SOS)、静态感应晶闸管(SIThy)和碳化硅结场效应晶体管(SiC-JFET),研制了重复频率为MHz数量级的脉冲电源。研制了一种基于感应储能的小型SOS电路。它使用半导体开关来控制SOS二极管的正向和反向电流,而不是常用的磁性开关。当输出电压脉冲为10 kV,脉冲宽度为15 ns (FWHM)时,重复频率达到500 kHz(突发)。已经开发并测试了使用SIThy的全桥开关单元,用于在100 ω负载下产生plusmn 2 kV的双极方形电压脉冲,重复频率为1 MHz(突发)。堆叠SiC-JFET开关单元由4个器件(2S × 2P)组成,工作频率为2kv和20a,重复频率高达5 MHz(突发)。研究了开关特性的重要问题,如上升时间、热负荷和器件间的平衡等。兆赫频率重复功率调制器在未来具有广泛的应用前景,特别是在高能加速器和生物处理方面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
MHz pulsed power by semiconductor devices
Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead of commonly used magnetic switch. The repetition rate has reached 500 kHz (burst) for output voltage pulse of 10 kV and pulse width of 15 ns (FWHM). A full-bridge switching unit using SIThy has been developed and tested for bipolar square voltage pulse generation of plusmn 2 kV for a 100-Omega load, at repetition rate of 1 MHz (burst). A stacked SiC-JFET switching unit consists of 4 devices (2S x 2P) has been operated for 2 kV and 20 A at repetition rate up to 5 MHz (burst). Important issues on switching characteristics, such as rise- time, heat loading, and balance between devices have been studied. The MHz-repetitive power modulators are expected to have various applications in the future, especially for high- energy accelerators and biological treatment.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Fabrication of multi-purpose probe to investigate the influence of ohmic magnetic field on density gradient in plasma Effects of nanosecond pulsed electromagnetic field on mitochondrial membrane potential Replaceable electrodes triggered vacuum switch and its application in lightning current component A generator Visualization of instabilities in hot magnetized plasmas by ECE Imaging Numerical simulation of nonthermal atmospheric pressure plasma jet and comparison with experiments
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1