{"title":"一个低TC，电源独立和过程补偿电流基准","authors":"Chundong Wu, W. Goh, C. Kok, Wanlan Yang, L. Siek","doi":"10.1109/CICC.2015.7338488","DOIUrl":null,"url":null,"abstract":"This paper presents a 10-μA, trim-free, low temperature coefficient, supply independent current reference with process compensation feature. Based on the proposed structure, a 130 ppm/°C temperature coefficient current reference across -40°C to 80°C temperature range is achieved. The proposed circuit can work at supply voltage varying from 2.4 to 3.0 V, while only has 30-nA drift at room temperature. The proposed current reference is implemented in 0.18-μm CMOS process occupying an area of 0.005 mm2.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"28 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"A low TC, supply independent and process compensated current reference\",\"authors\":\"Chundong Wu, W. Goh, C. Kok, Wanlan Yang, L. Siek\",\"doi\":\"10.1109/CICC.2015.7338488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 10-μA, trim-free, low temperature coefficient, supply independent current reference with process compensation feature. Based on the proposed structure, a 130 ppm/°C temperature coefficient current reference across -40°C to 80°C temperature range is achieved. The proposed circuit can work at supply voltage varying from 2.4 to 3.0 V, while only has 30-nA drift at room temperature. The proposed current reference is implemented in 0.18-μm CMOS process occupying an area of 0.005 mm2.\",\"PeriodicalId\":6665,\"journal\":{\"name\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"volume\":\"28 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2015.7338488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low TC, supply independent and process compensated current reference
This paper presents a 10-μA, trim-free, low temperature coefficient, supply independent current reference with process compensation feature. Based on the proposed structure, a 130 ppm/°C temperature coefficient current reference across -40°C to 80°C temperature range is achieved. The proposed circuit can work at supply voltage varying from 2.4 to 3.0 V, while only has 30-nA drift at room temperature. The proposed current reference is implemented in 0.18-μm CMOS process occupying an area of 0.005 mm2.
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