插入损耗为3db的铌酸锂薄膜的5.4 GHz声延迟线

Ruochen Lu, Yansong Yang, Steffen Link, S. Gong
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引用次数: 2

摘要

在这项工作中,我们在铌酸锂薄膜中使用一阶反对称(A1)模式提出了5.4 GHz低损耗声延迟线(ADLs)。adl采用单相单向换能器(SPUDT)设计,特征尺寸为四分之一声波波长。所制得的A1 adl的特征尺寸为0.45 μm,中心频率为5.4 GHz,最小插入损耗(IL)为3.0 dB,分数带宽(FBW)为1.6%,占用空间为0.0074 mm2。同时低IL和高工作频率显著超过了最先进的adl性能。提取了A1声波的传播特性。所展示的性能可以潜在地为未来低于6 GHz频段的5G应用实现低损耗、高频横向滤波器应用。
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5.4 GHz Acoustic Delay Lines in Lithium Niobate Thin Film with 3 dB Insertion Loss
In this work, we present the low-loss acoustic delay lines (ADLs) at 5.4 GHz, using the first-order antisymmetric (A1) mode in lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of the quarter acoustic wavelength. The fabricated miniature A1 ADLs with a feature size of 0.45 μm show a center frequency of 5.4 GHz, a minimum insertion loss (IL) of 3.0 dB, and a fractional bandwidth (FBW) of 1.6% while occupying a footprint of 0.0074 mm2. The simultaneously low IL and high operating frequency significantly surpass the state-of-the-art performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated performance can potentially enable low-loss, high-frequency transversal filter applications for future 5G applications in the sub-6 GHz spectrum bands.
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