Kazuki Uchida, T. Nishiyama, N. Kamada, Y. Onuki, Xu Han, G. Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, N. Hayasaka, K. Shimomura
{"title":"InP/Si衬底集成GalnAsP条纹激光器的激光特性","authors":"Kazuki Uchida, T. Nishiyama, N. Kamada, Y. Onuki, Xu Han, G. Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, N. Hayasaka, K. Shimomura","doi":"10.1109/CLEOPR.2017.8119057","DOIUrl":null,"url":null,"abstract":"We have successfully obtained GalnAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1μm thickness InP and silicon substrate. 1.2μm wavelength GalnAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained under pulsed condition.","PeriodicalId":6655,"journal":{"name":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","volume":"30 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lasing characteristics of GalnAsP stripe laser integrated on InP/Si substrate\",\"authors\":\"Kazuki Uchida, T. Nishiyama, N. Kamada, Y. Onuki, Xu Han, G. Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, N. Hayasaka, K. Shimomura\",\"doi\":\"10.1109/CLEOPR.2017.8119057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully obtained GalnAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1μm thickness InP and silicon substrate. 1.2μm wavelength GalnAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained under pulsed condition.\",\"PeriodicalId\":6655,\"journal\":{\"name\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"volume\":\"30 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.2017.8119057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.2017.8119057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lasing characteristics of GalnAsP stripe laser integrated on InP/Si substrate
We have successfully obtained GalnAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1μm thickness InP and silicon substrate. 1.2μm wavelength GalnAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained under pulsed condition.
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