{"title":"利用导纳光谱法进行深能级谱分析","authors":"I. Marchishin, V. N. Ovsyuk, S. B. Sevastianov","doi":"10.1002/PSSA.2211060119","DOIUrl":null,"url":null,"abstract":"A theory for the admittance spectroscopy (AS) to study deep levels in surface-barrier structures with nonuniform distribution of impurities is developed. A procedure of treating experimental data to determine energy positions of levels, their capture cross-sections, as well as the Concentration profiles is described. The effect of various factors on AS resolution is discussed. \n \n \n \n[Russian Text Ignored].","PeriodicalId":18217,"journal":{"name":"March 16","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Deep Level Profiling Using an Admittance Spectroscopy Method\",\"authors\":\"I. Marchishin, V. N. Ovsyuk, S. B. Sevastianov\",\"doi\":\"10.1002/PSSA.2211060119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A theory for the admittance spectroscopy (AS) to study deep levels in surface-barrier structures with nonuniform distribution of impurities is developed. A procedure of treating experimental data to determine energy positions of levels, their capture cross-sections, as well as the Concentration profiles is described. The effect of various factors on AS resolution is discussed. \\n \\n \\n \\n[Russian Text Ignored].\",\"PeriodicalId\":18217,\"journal\":{\"name\":\"March 16\",\"volume\":\"22 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"March 16\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2211060119\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"March 16","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2211060119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deep Level Profiling Using an Admittance Spectroscopy Method
A theory for the admittance spectroscopy (AS) to study deep levels in surface-barrier structures with nonuniform distribution of impurities is developed. A procedure of treating experimental data to determine energy positions of levels, their capture cross-sections, as well as the Concentration profiles is described. The effect of various factors on AS resolution is discussed.
[Russian Text Ignored].
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