{"title":"表面/界面应力对应力GaN纳米膜导热性的影响","authors":"Linli Zhu, Hao Luo","doi":"10.1109/IMWS-AMP.2015.7324995","DOIUrl":null,"url":null,"abstract":"This work investigates the effects of surface/interface stress on phonon thermal conductivity of stressed GaN nanofilms theoretically. The elasticity model is applied to describe the phonon dispersion relations of spatially confined GaN nanofilms. The acoustoelastic effects and surface/interface stress effects are accounted for in calculating the phonon properties and thermal conductivity. Theoretical results show that the surface/interface stress can alter significantly the phonon properties such as the phonon dispersion relations, resulting in the modification of thermal conductivity in GaN nanofilms. In addition, the surface/interface stress can change the dependence of thermal conductivity on the prestress fields and temperature. These results can be useful in controlling the thermal conductivity based on the strain/stress engineering in GaN nanostructures-based electronic devices.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of surface/interface stress on thermal conductivity of stressed GaN nanofilms\",\"authors\":\"Linli Zhu, Hao Luo\",\"doi\":\"10.1109/IMWS-AMP.2015.7324995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the effects of surface/interface stress on phonon thermal conductivity of stressed GaN nanofilms theoretically. The elasticity model is applied to describe the phonon dispersion relations of spatially confined GaN nanofilms. The acoustoelastic effects and surface/interface stress effects are accounted for in calculating the phonon properties and thermal conductivity. Theoretical results show that the surface/interface stress can alter significantly the phonon properties such as the phonon dispersion relations, resulting in the modification of thermal conductivity in GaN nanofilms. In addition, the surface/interface stress can change the dependence of thermal conductivity on the prestress fields and temperature. These results can be useful in controlling the thermal conductivity based on the strain/stress engineering in GaN nanostructures-based electronic devices.\",\"PeriodicalId\":6625,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"9 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2015.7324995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2015.7324995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of surface/interface stress on thermal conductivity of stressed GaN nanofilms
This work investigates the effects of surface/interface stress on phonon thermal conductivity of stressed GaN nanofilms theoretically. The elasticity model is applied to describe the phonon dispersion relations of spatially confined GaN nanofilms. The acoustoelastic effects and surface/interface stress effects are accounted for in calculating the phonon properties and thermal conductivity. Theoretical results show that the surface/interface stress can alter significantly the phonon properties such as the phonon dispersion relations, resulting in the modification of thermal conductivity in GaN nanofilms. In addition, the surface/interface stress can change the dependence of thermal conductivity on the prestress fields and temperature. These results can be useful in controlling the thermal conductivity based on the strain/stress engineering in GaN nanostructures-based electronic devices.