M. Johnston, J. Lloyd‐Hughes, E. Casto-Camus, M. Fraser, C. Jagadish
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Simulation and optimization of arsenic-implanted THz emitters
We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As/sup +/ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As/sup +/ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ion-implantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.
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