K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, Takafumi Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, Y. Watanabe
{"title":"具有箝位参考和充分参考方案的64Mb MRAM","authors":"K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, Takafumi Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, Y. Watanabe","doi":"10.1109/ISSCC.2010.5433948","DOIUrl":null,"url":null,"abstract":"In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1]. However, the memory cell size of STT-MRAM reported so far is still over 1µm2, and the memory capacity is limited to 32Mbit even in almost 100mm2 die size [2]. The large cell size is due to the large switching current of MRAM cells. In order to reduce the cell size, we have proposed the perpendicular tunnel magnetoresistance (P-TMR) device, and have confirmed its high potential to achieve lower switching current [3]. In this paper, a 64Mb STTMRAM with the P-TMR device having the circuit techniques to maximize operational margin is described.","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"1 1","pages":"258-259"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"205","resultStr":"{\"title\":\"A 64Mb MRAM with clamped-reference and adequate-reference schemes\",\"authors\":\"K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, Takafumi Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, Y. Watanabe\",\"doi\":\"10.1109/ISSCC.2010.5433948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1]. However, the memory cell size of STT-MRAM reported so far is still over 1µm2, and the memory capacity is limited to 32Mbit even in almost 100mm2 die size [2]. The large cell size is due to the large switching current of MRAM cells. In order to reduce the cell size, we have proposed the perpendicular tunnel magnetoresistance (P-TMR) device, and have confirmed its high potential to achieve lower switching current [3]. In this paper, a 64Mb STTMRAM with the P-TMR device having the circuit techniques to maximize operational margin is described.\",\"PeriodicalId\":6418,\"journal\":{\"name\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"volume\":\"1 1\",\"pages\":\"258-259\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"205\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2010.5433948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5433948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 64Mb MRAM with clamped-reference and adequate-reference schemes
In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1]. However, the memory cell size of STT-MRAM reported so far is still over 1µm2, and the memory capacity is limited to 32Mbit even in almost 100mm2 die size [2]. The large cell size is due to the large switching current of MRAM cells. In order to reduce the cell size, we have proposed the perpendicular tunnel magnetoresistance (P-TMR) device, and have confirmed its high potential to achieve lower switching current [3]. In this paper, a 64Mb STTMRAM with the P-TMR device having the circuit techniques to maximize operational margin is described.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
