电感感知互连缩放

K. Banerjee, A. Mehrotra
{"title":"电感感知互连缩放","authors":"K. Banerjee, A. Mehrotra","doi":"10.1109/ISQED.2002.996689","DOIUrl":null,"url":null,"abstract":"This paper introduces a new global-tier interconnect scaling scheme which ensures that inductance effects do not start dominating the overall interconnect performance. It is shown that for unscaled global lines, inductance effects increase as technology scales while for the scaling scheme proposed by ITRS (1999), interconnects become extremely resistive and, while inductance effects diminish with scaling but the performance, specifically, delay per unit length, degrades with scaling. The effect of the proposed global interconnect scaling scheme on optimized driver size, interconnect length, delay per unit length and total buffer area is quantified and compared with the unscaled and the ITRS cases. It is shown that the proposed scaling scheme improves the delay per unit length without degrading inductive effects or increasing buffer area with scaling.","PeriodicalId":20510,"journal":{"name":"Proceedings International Symposium on Quality Electronic Design","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Inductance aware interconnect scaling\",\"authors\":\"K. Banerjee, A. Mehrotra\",\"doi\":\"10.1109/ISQED.2002.996689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a new global-tier interconnect scaling scheme which ensures that inductance effects do not start dominating the overall interconnect performance. It is shown that for unscaled global lines, inductance effects increase as technology scales while for the scaling scheme proposed by ITRS (1999), interconnects become extremely resistive and, while inductance effects diminish with scaling but the performance, specifically, delay per unit length, degrades with scaling. The effect of the proposed global interconnect scaling scheme on optimized driver size, interconnect length, delay per unit length and total buffer area is quantified and compared with the unscaled and the ITRS cases. It is shown that the proposed scaling scheme improves the delay per unit length without degrading inductive effects or increasing buffer area with scaling.\",\"PeriodicalId\":20510,\"journal\":{\"name\":\"Proceedings International Symposium on Quality Electronic Design\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2002.996689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2002.996689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

本文介绍了一种新的全局层互连缩放方案,以确保电感效应不会开始主导整体互连性能。研究表明,对于未缩放的全局线路,电感效应随着技术的扩展而增加,而对于ITRS(1999)提出的缩放方案,互连变得非常电阻,虽然电感效应随着缩放而减小,但性能,特别是每单位长度的延迟,会随着缩放而下降。量化了所提出的全局互连缩放方案对优化驱动器尺寸、互连长度、单位长度延迟和总缓冲区面积的影响,并与未缩放和ITRS情况进行了比较。结果表明,该缩放方案在不降低感应效应和增加缓冲面积的前提下,提高了单位长度时延。
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Inductance aware interconnect scaling
This paper introduces a new global-tier interconnect scaling scheme which ensures that inductance effects do not start dominating the overall interconnect performance. It is shown that for unscaled global lines, inductance effects increase as technology scales while for the scaling scheme proposed by ITRS (1999), interconnects become extremely resistive and, while inductance effects diminish with scaling but the performance, specifically, delay per unit length, degrades with scaling. The effect of the proposed global interconnect scaling scheme on optimized driver size, interconnect length, delay per unit length and total buffer area is quantified and compared with the unscaled and the ITRS cases. It is shown that the proposed scaling scheme improves the delay per unit length without degrading inductive effects or increasing buffer area with scaling.
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