65 nm CMOS 2GHz光纤前端前置放大电路的仿真研究

Ruwaida Al-Berwari, Muhammed Hameed Alsheikhjader
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引用次数: 0

摘要

在本研究中,采用该技术设计了一种新的带电流反射镜的跨阻放大器(TIA) (65nm)。TIA由一个公共栅极晶体管放大器(CG TIA)和一个公共源放大器作为输入级,带有本地有源反馈,第二级是电流镜和本地有源反馈,以增加增益。为了验证所提出的TIA的性能,在LT spice程序中使用该技术(65nm CMOS)的系数进行了电路仿真。仿真结果表明,当输入电容为(100 fF),输入参考噪声电流谱密度为(14 pA/√Hz),输入电压为(1V)时,接口阻抗增益为(41 dBΩ),功耗值为(0.091 mw)。与其他研究相比,本研究的主要重点是低功耗和低电压。
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A Simulated Study of 65 nm CMOS 2GHz Front-End Preamplifier Circuit for Optical Fiber Applications
In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.
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