{"title":"65 nm CMOS 2GHz光纤前端前置放大电路的仿真研究","authors":"Ruwaida Al-Berwari, Muhammed Hameed Alsheikhjader","doi":"10.33899/rjs.2022.175390","DOIUrl":null,"url":null,"abstract":"In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.","PeriodicalId":20803,"journal":{"name":"Rafidain journal of science","volume":"17 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Simulated Study of 65 nm CMOS 2GHz Front-End Preamplifier Circuit for Optical Fiber Applications\",\"authors\":\"Ruwaida Al-Berwari, Muhammed Hameed Alsheikhjader\",\"doi\":\"10.33899/rjs.2022.175390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.\",\"PeriodicalId\":20803,\"journal\":{\"name\":\"Rafidain journal of science\",\"volume\":\"17 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rafidain journal of science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.33899/rjs.2022.175390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rafidain journal of science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33899/rjs.2022.175390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Simulated Study of 65 nm CMOS 2GHz Front-End Preamplifier Circuit for Optical Fiber Applications
In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.