I. Hermida, G. Wiranto, D. Mahmudin, K. Deni Permana, L. Utari, A. Setiawan
{"title":"用丝网印刷法生长微带带通滤波器用的Ag、Pd/Ag和Au厚膜","authors":"I. Hermida, G. Wiranto, D. Mahmudin, K. Deni Permana, L. Utari, A. Setiawan","doi":"10.1109/RSM.2015.7355009","DOIUrl":null,"url":null,"abstract":"A study on fabrication of thick film Ag, Pd/Ag, and Au for microstrip band pass filter application using screen printing method has been carried out. Research carried out by making three band pass filter using conductor paste Au, Ag, and Pd/Ag. Band pass filters are designed at the operating center frequency 456 MHz, bandwidth of 60 MHz, 1 VSWR, and -93.55 dB loss. SEM, EDS and FTIR characterization conducted to determine morphology and content of microstrip band pass filter. Meanwhile, the performance of band pass filter was examined by using VNA SEM results indicate grain size conductor strip using Au, Ag, and Pd/Ag are 0.435 nm, 0.389 nm and 0.913 nm. The thickness of each conductor strips are 10.47μm, 12.98 μm and 14.15μm. Based on SEM results showed pores scattered on the surface of conductor strip, which causes the value loss increases. EDS and FTIR results indicate the presence of impurities C, N, O, H and Al on conductor strip of microstrip. The measurement of three band pass filter with VNA get the results that the center frequency 456 MHz, bandwidth of 60 MHz, 3 dB loss and 1.3 VSWR. Fabrication results indicate the value of loss and VSWR, higher than the design. It was due to conductor loss that occurs due to pore on the surface microstrip and also due to the impurity.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ag, Pd/Ag, and Au thick films growth using screen printing method for microstrip band pass filter application\",\"authors\":\"I. Hermida, G. Wiranto, D. Mahmudin, K. Deni Permana, L. Utari, A. Setiawan\",\"doi\":\"10.1109/RSM.2015.7355009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study on fabrication of thick film Ag, Pd/Ag, and Au for microstrip band pass filter application using screen printing method has been carried out. Research carried out by making three band pass filter using conductor paste Au, Ag, and Pd/Ag. Band pass filters are designed at the operating center frequency 456 MHz, bandwidth of 60 MHz, 1 VSWR, and -93.55 dB loss. SEM, EDS and FTIR characterization conducted to determine morphology and content of microstrip band pass filter. Meanwhile, the performance of band pass filter was examined by using VNA SEM results indicate grain size conductor strip using Au, Ag, and Pd/Ag are 0.435 nm, 0.389 nm and 0.913 nm. The thickness of each conductor strips are 10.47μm, 12.98 μm and 14.15μm. Based on SEM results showed pores scattered on the surface of conductor strip, which causes the value loss increases. EDS and FTIR results indicate the presence of impurities C, N, O, H and Al on conductor strip of microstrip. The measurement of three band pass filter with VNA get the results that the center frequency 456 MHz, bandwidth of 60 MHz, 3 dB loss and 1.3 VSWR. Fabrication results indicate the value of loss and VSWR, higher than the design. It was due to conductor loss that occurs due to pore on the surface microstrip and also due to the impurity.\",\"PeriodicalId\":6667,\"journal\":{\"name\":\"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"volume\":\"6 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2015.7355009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7355009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ag, Pd/Ag, and Au thick films growth using screen printing method for microstrip band pass filter application
A study on fabrication of thick film Ag, Pd/Ag, and Au for microstrip band pass filter application using screen printing method has been carried out. Research carried out by making three band pass filter using conductor paste Au, Ag, and Pd/Ag. Band pass filters are designed at the operating center frequency 456 MHz, bandwidth of 60 MHz, 1 VSWR, and -93.55 dB loss. SEM, EDS and FTIR characterization conducted to determine morphology and content of microstrip band pass filter. Meanwhile, the performance of band pass filter was examined by using VNA SEM results indicate grain size conductor strip using Au, Ag, and Pd/Ag are 0.435 nm, 0.389 nm and 0.913 nm. The thickness of each conductor strips are 10.47μm, 12.98 μm and 14.15μm. Based on SEM results showed pores scattered on the surface of conductor strip, which causes the value loss increases. EDS and FTIR results indicate the presence of impurities C, N, O, H and Al on conductor strip of microstrip. The measurement of three band pass filter with VNA get the results that the center frequency 456 MHz, bandwidth of 60 MHz, 3 dB loss and 1.3 VSWR. Fabrication results indicate the value of loss and VSWR, higher than the design. It was due to conductor loss that occurs due to pore on the surface microstrip and also due to the impurity.