{"title":"改进表面化学计量学的GaSb样品的太赫兹辐射","authors":"S. Winnerl, T. Dekorsy, S. Sinning, M. Helm","doi":"10.1109/ICIMW.2004.1422182","DOIUrl":null,"url":null,"abstract":"We report on the terahertz emission from GaSb surfaces with thermally modified surface stoichiometry. The thermal treatment increases significantly the THz emission from the GaSb samples. For optimal conditions, namely an annealing temperature of 500/spl deg/C, the emission is comparable to the emission from n-doped GaAs. The THz emission is due to the acceleration of carriers in a surface field, caused by a surface decomposition. The surface decomposition was confirmed by the observation of Sb coherent phonons in pump-probe experiments.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"THz emission from GaSb samples with modified surface stoichiometry\",\"authors\":\"S. Winnerl, T. Dekorsy, S. Sinning, M. Helm\",\"doi\":\"10.1109/ICIMW.2004.1422182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the terahertz emission from GaSb surfaces with thermally modified surface stoichiometry. The thermal treatment increases significantly the THz emission from the GaSb samples. For optimal conditions, namely an annealing temperature of 500/spl deg/C, the emission is comparable to the emission from n-doped GaAs. The THz emission is due to the acceleration of carriers in a surface field, caused by a surface decomposition. The surface decomposition was confirmed by the observation of Sb coherent phonons in pump-probe experiments.\",\"PeriodicalId\":13627,\"journal\":{\"name\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2004.1422182\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
THz emission from GaSb samples with modified surface stoichiometry
We report on the terahertz emission from GaSb surfaces with thermally modified surface stoichiometry. The thermal treatment increases significantly the THz emission from the GaSb samples. For optimal conditions, namely an annealing temperature of 500/spl deg/C, the emission is comparable to the emission from n-doped GaAs. The THz emission is due to the acceleration of carriers in a surface field, caused by a surface decomposition. The surface decomposition was confirmed by the observation of Sb coherent phonons in pump-probe experiments.
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