高效纳米结构铜铟硒化镓薄膜太阳能电池的性能研究

Selma MOSTEFA KARA, A. Benmansour
{"title":"高效纳米结构铜铟硒化镓薄膜太阳能电池的性能研究","authors":"Selma MOSTEFA KARA, A. Benmansour","doi":"10.46904/eea.22.70.1.1108001","DOIUrl":null,"url":null,"abstract":"Nowadays it is widely acknowledged that solar photovoltaic energy is one of the preferred options for sustainable management of the future energy needs of the world. For this, new technological processes, known as second and third generations, based on the use of thin films and nanomaterials, have recently been developed in order to reduce the cost of solar cells. Over the past few years, the yield of second-generation Cu(In, Ga)Se2 thin-film cells has exceeded 22 %. It was found that as nanostructured materials such as nanowire arrays often have a higher light absorption rate than thin films, they can therefore be used. This article aims to design and model nanostructured CIGS thin film solar cells based on indium tin oxide (ITO) nanowires. Modelling provides information on the operation of CIGS solar cells, as well as on the mechanisms of absorption and electric charge transport. The purpose of this work is to evaluate the electrical and optical characteristics (ISC, VOC, FF, η) of a ZnO/CdS/CIGS heterojunction thin film structure. Thus, an optimum efficiency of 17.57 % and a form factor of 76.56 % were achieved. Afterwards, the Mo film rear contact was replaced with ITO nanowires which were introduced into the CIGS-based solar cell. The results indicated that the solar cells under study exhibited very good photovoltaic performance, with an efficiency of 21.26 %. It is worth noting that this performance is higher than that of the corresponding CIGS thin film cells. In addition, the large active surface area of the ITO nanowire electrode and the short distance that the charge must travel helped to improve charge collection in the nanostructure. This would certainly increase the short circuit current ISC, and consequently the electrical efficiency. The simulation was based on the low-field mobility model, and on Shockley-Read-Hall (SRH) and Auger carrier transport and recombination models which may be activated in ATLAS-SILVACO (2D).","PeriodicalId":38292,"journal":{"name":"EEA - Electrotehnica, Electronica, Automatica","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of High Efficiency Nanostructured Copper Indium Gallium Selenide Thin Film Solar Cells\",\"authors\":\"Selma MOSTEFA KARA, A. Benmansour\",\"doi\":\"10.46904/eea.22.70.1.1108001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nowadays it is widely acknowledged that solar photovoltaic energy is one of the preferred options for sustainable management of the future energy needs of the world. For this, new technological processes, known as second and third generations, based on the use of thin films and nanomaterials, have recently been developed in order to reduce the cost of solar cells. Over the past few years, the yield of second-generation Cu(In, Ga)Se2 thin-film cells has exceeded 22 %. It was found that as nanostructured materials such as nanowire arrays often have a higher light absorption rate than thin films, they can therefore be used. This article aims to design and model nanostructured CIGS thin film solar cells based on indium tin oxide (ITO) nanowires. Modelling provides information on the operation of CIGS solar cells, as well as on the mechanisms of absorption and electric charge transport. The purpose of this work is to evaluate the electrical and optical characteristics (ISC, VOC, FF, η) of a ZnO/CdS/CIGS heterojunction thin film structure. Thus, an optimum efficiency of 17.57 % and a form factor of 76.56 % were achieved. Afterwards, the Mo film rear contact was replaced with ITO nanowires which were introduced into the CIGS-based solar cell. The results indicated that the solar cells under study exhibited very good photovoltaic performance, with an efficiency of 21.26 %. It is worth noting that this performance is higher than that of the corresponding CIGS thin film cells. In addition, the large active surface area of the ITO nanowire electrode and the short distance that the charge must travel helped to improve charge collection in the nanostructure. This would certainly increase the short circuit current ISC, and consequently the electrical efficiency. The simulation was based on the low-field mobility model, and on Shockley-Read-Hall (SRH) and Auger carrier transport and recombination models which may be activated in ATLAS-SILVACO (2D).\",\"PeriodicalId\":38292,\"journal\":{\"name\":\"EEA - Electrotehnica, Electronica, Automatica\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EEA - Electrotehnica, Electronica, Automatica\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.46904/eea.22.70.1.1108001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EEA - Electrotehnica, Electronica, Automatica","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.46904/eea.22.70.1.1108001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

目前,人们普遍认为太阳能光伏能源是可持续管理未来世界能源需求的首选方案之一。为此,最近开发了基于薄膜和纳米材料的第二代和第三代新技术,以降低太阳能电池的成本。近年来,第二代Cu(In, Ga)Se2薄膜电池的产率已超过22%。研究发现,由于纳米线阵列等纳米结构材料通常比薄膜具有更高的光吸收率,因此可以使用它们。本文旨在设计和模拟基于氧化铟锡(ITO)纳米线的CIGS薄膜太阳能电池。模拟提供了关于CIGS太阳能电池运行的信息,以及关于吸收和电荷传输机制的信息。本文的目的是评估ZnO/CdS/CIGS异质结薄膜结构的电学和光学特性(ISC, VOC, FF, η)。因此,最佳效率为17.57%,形状系数为76.56%。然后,用ITO纳米线取代Mo膜后触点,将其引入到基于cigs的太阳能电池中。结果表明,所研究的太阳能电池具有良好的光电性能,效率为21.26%。值得注意的是,这一性能高于相应的CIGS薄膜电池。此外,ITO纳米线电极的大活性表面积和电荷必须移动的短距离有助于改善纳米结构中的电荷收集。这肯定会增加短路电流ISC,从而提高电效率。模拟基于低场迁移率模型,以及可能在ATLAS-SILVACO (2D)中激活的Shockley-Read-Hall (SRH)和Auger载流子输运和重组模型。
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Properties of High Efficiency Nanostructured Copper Indium Gallium Selenide Thin Film Solar Cells
Nowadays it is widely acknowledged that solar photovoltaic energy is one of the preferred options for sustainable management of the future energy needs of the world. For this, new technological processes, known as second and third generations, based on the use of thin films and nanomaterials, have recently been developed in order to reduce the cost of solar cells. Over the past few years, the yield of second-generation Cu(In, Ga)Se2 thin-film cells has exceeded 22 %. It was found that as nanostructured materials such as nanowire arrays often have a higher light absorption rate than thin films, they can therefore be used. This article aims to design and model nanostructured CIGS thin film solar cells based on indium tin oxide (ITO) nanowires. Modelling provides information on the operation of CIGS solar cells, as well as on the mechanisms of absorption and electric charge transport. The purpose of this work is to evaluate the electrical and optical characteristics (ISC, VOC, FF, η) of a ZnO/CdS/CIGS heterojunction thin film structure. Thus, an optimum efficiency of 17.57 % and a form factor of 76.56 % were achieved. Afterwards, the Mo film rear contact was replaced with ITO nanowires which were introduced into the CIGS-based solar cell. The results indicated that the solar cells under study exhibited very good photovoltaic performance, with an efficiency of 21.26 %. It is worth noting that this performance is higher than that of the corresponding CIGS thin film cells. In addition, the large active surface area of the ITO nanowire electrode and the short distance that the charge must travel helped to improve charge collection in the nanostructure. This would certainly increase the short circuit current ISC, and consequently the electrical efficiency. The simulation was based on the low-field mobility model, and on Shockley-Read-Hall (SRH) and Auger carrier transport and recombination models which may be activated in ATLAS-SILVACO (2D).
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来源期刊
EEA - Electrotehnica, Electronica, Automatica
EEA - Electrotehnica, Electronica, Automatica Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
26
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