A. K. Raibaruah, Angshumala Talukdar, Kaushik Chandra Deva Sarma
{"title":"无掺杂无结场效应晶体管","authors":"A. K. Raibaruah, Angshumala Talukdar, Kaushik Chandra Deva Sarma","doi":"10.1109/ComPE49325.2020.9200000","DOIUrl":null,"url":null,"abstract":"We present here characteristics study of an undoped Double gate Junctionless field effect transistor (UnDGJLFET). The body of the device is intrinsic in nature. A comparative simulation study on electrical performance of the undoped DGJLFET and a DGJLFET with a doping concentration of 1019/cm3 has been done in TCAD. The study shows that the UnDGJLFET exhibits much lower subthreshold swing and higher threshold voltage than the doped one. However due to less number of charge carriers the on current is much lower for the UnDGJLFET compared to that of doped JLFET.","PeriodicalId":6804,"journal":{"name":"2020 International Conference on Computational Performance Evaluation (ComPE)","volume":"111 1","pages":"725-727"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Undoped Junctionless Field Effect Transistor\",\"authors\":\"A. K. Raibaruah, Angshumala Talukdar, Kaushik Chandra Deva Sarma\",\"doi\":\"10.1109/ComPE49325.2020.9200000\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present here characteristics study of an undoped Double gate Junctionless field effect transistor (UnDGJLFET). The body of the device is intrinsic in nature. A comparative simulation study on electrical performance of the undoped DGJLFET and a DGJLFET with a doping concentration of 1019/cm3 has been done in TCAD. The study shows that the UnDGJLFET exhibits much lower subthreshold swing and higher threshold voltage than the doped one. However due to less number of charge carriers the on current is much lower for the UnDGJLFET compared to that of doped JLFET.\",\"PeriodicalId\":6804,\"journal\":{\"name\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"volume\":\"111 1\",\"pages\":\"725-727\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ComPE49325.2020.9200000\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Computational Performance Evaluation (ComPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ComPE49325.2020.9200000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present here characteristics study of an undoped Double gate Junctionless field effect transistor (UnDGJLFET). The body of the device is intrinsic in nature. A comparative simulation study on electrical performance of the undoped DGJLFET and a DGJLFET with a doping concentration of 1019/cm3 has been done in TCAD. The study shows that the UnDGJLFET exhibits much lower subthreshold swing and higher threshold voltage than the doped one. However due to less number of charge carriers the on current is much lower for the UnDGJLFET compared to that of doped JLFET.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
