T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz
{"title":"w波段射频MEMS双根和三根阻抗调谐器","authors":"T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz","doi":"10.1109/MTT67880.2005.9387853","DOIUrl":null,"url":null,"abstract":"Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\\left\\vert\\Gamma_{MAX} \\right\\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"W-Band RF MEMS Double and Triple-Stub Impedance Tuners\",\"authors\":\"T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz\",\"doi\":\"10.1109/MTT67880.2005.9387853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\\\\left\\\\vert\\\\Gamma_{MAX} \\\\right\\\\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTT67880.2005.9387853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTT67880.2005.9387853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
W-Band RF MEMS Double and Triple-Stub Impedance Tuners
Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\left\vert\Gamma_{MAX} \right\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
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