莫来石中MoSi亚2颗粒的氧化机理

M. Borom, R. Bolon, M. Brun
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引用次数: 4

摘要

碳化硅分散相在氧化物基体中的氧化是通过氧扩散进行的。氧与硅反应形成的二氧化硅可以与基体氧化物反应形成硅酸盐,硅酸盐可以控制氧向反应界面扩散的速率。研究了两种反应产物组成相似但扩散活化能明显不同的分散相体系,以阐明氧化机理。SiC颗粒的氧化与CO气体的释放完全发生在反应产物/本体-材料界面。发现MoSi{sub 2}颗粒的氧化发生在反应产物的三个区域代表的三个阶段。由于粘性硅酸盐通过气体演化挤压到表面,在硅化物分散过程中发生了相的机械分离。
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Oxidation mechanism of MoSi sub 2 particles dispersed in mullite
The oxidation of silicide carbide dispersed phases in oxide matrices has been shown to proceed by oxygen diffusion. Silica formed by the reaction of oxygen with silicon can react with the matrix oxide to form a silicate, which may control the rate of diffusion of oxygen to the reaction interface. Two dispersed phase systems with compositionally similar reaction products, but with distinctly different activation energies for diffusion, have been studied to elucidate the oxidation mechanism. The oxidation of SiC particulates with the liberation of CO gas was found to occur totally at the reaction-product/bulk-material interface. The oxidation of MoSi{sub 2} particulates was found to occur in three stages represented by three zones in the reaction product. Mechanical separation of phases was observed to occur with the silicide dispersion because of the extrusion of the viscous silicate to the surface via gaseous evolution.
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