急性多涎是一个突出症状的女孩与胰岛素-眼窝癫痫。

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2023-06-26 eCollection Date: 2023-12-01 DOI:10.1002/ped4.12390
Ke Sun, Dongju Yang, Shuli Liang, Liu Yuan, Guojun Zhang
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引用次数: 0

摘要

唾液过多与罗兰癫痫和其他儿童癫痫综合征有关。然而,纯粹的流涎性发作是一种罕见的局灶性发作,在整个发作过程中,其主要特征是急性高涎。病例介绍:我们提出了一例纯粹的流涎性癫痫发作起源于右侧中央后皮层,证实了良好的手术结果。我们试图从行为和神经网络的角度分析症状,并提出一种可能的机制,以产生急性唾液过多和纯粹的唾液发作。结论:根据以往的文献报道和我们的病例,我们强调盖层在急性唾液过多患者中的重要性,特别是在纯唾液发作的患者中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Ictal hypersalivation as a prominent symptom in a girl with insulo-opercular epilepsy.

Introduction: Hypersalivation has been associated with Rolandic epilepsy and other childhood epilepsy syndromes. However, pure salivatory seizures are a rare type of focal seizure in which ictal hypersalivation is the dominant feature throughout the seizures.

Case presentation: We present a case of pure salivatory seizures originating from the right post-central operculum cortex, confirmed by the favorable surgical outcome. We attempt to analyze the symptom from behavioral and neural network perspectives and propose a possible mechanism to generate ictal hypersalivation and pure salivatory seizures.

Conclusion: Based on previous reports in the literature and our case, we emphasize the importance of the operculum in patients with ictal hypersalivation, particularly in patients with pure salivatory seizures.

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来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
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