Nikolichev D.E., Kriukov R.N., Zdoroveyshchev A.V., Kuznetsov Yu. M., Zdoroveyshchev D.A., Dudin Yu.A., Dorokhin M. V., Skrylev A.A.
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Effect of High Temperature Annealing on the Physicochemical Properties of systems based on FeSi-=SUB=-x-=/SUB=-
It has been established that the physicochemical properties of structures based on iron silicides formed by ion implantation of iron ions into silicon depend significantly on the time of subsequent high-temperature annealing. Objects with different geometric parameters are formed on the surface and the roughness increases. Annealing at 1000oC in an Ar atmosphere is accompanied by a decrease in the content of the Fe-Si chemical bonds during the first 60 seconds. The reason for the drop in thermal conductivity with increasing annealing temperature is the formation of silicide complexes. Keywords: iron silicide, thermoelectric, ion implantation, chemical composition, X-ray photoelectron spectroscopy.
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Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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