(Application)利用x射线衍射和反射法分析ZnO表面化学机械处理后的损伤层

K. Shcherbachev, M. Voronova
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摘要

ZnO单晶被用于制造高能电子辐照紫外激光阴极射线管的激光靶和激光器的同外延衬底。基于ZnO的UV led技术对表面质量提出了严格的要求。化学-机械抛光提供了良好的表面质量,但众所周知,抛光氧化锌的极性面可能会产生不同的结果。采用表面敏感高分辨率x射线衍射(HRXRD)和x射线反射(XRR)方法研究了化学机械抛光后ZnO(0001)和(000-1)极性面的结构。从不同的水热生长铸锭中切割出两个双面抛光(0001)ZnO衬底。分别从x射线衍射曲线和镜面反射曲线上获取了试样Zn面和O面的损伤和密度深度分布图。在三晶装置中的D8 Discover x射线衍射仪(Bruker-AXS,德国)上,测量了[0002]和[0000]倒向点位附近的强度分布。为了分离相干和非相干散射分量,我们沿垂直于衍射矢量的截面分析了距离倒易点位不同距离处的强度分布图。并将HRXRD和XRR数据与原子力显微镜(AFM)数据进行了比较。HRXRD方法在试样的两个面均发现了损伤层,且Zn和O面损伤层厚度不同,Zn面为5-7 nm, O面为10-11 nm。XRR方法表明,两个面都足够光滑。这些结果经原子力显微镜(AFM)证实(RMS粗糙度~ 0.23±0.07 nm)。然而,发现浅层中电子的浓度发生了变化。O型面的层厚更大。我们假设观察到的现象是由Zn和O面与抛光剂的化学相互作用的差异引起的。
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Application of X-ray diffraction and reflectometry methods for analysis of damaged layers on polar faces of ZnO after surface chemical-mechanical treatment
ZnO single crystals are used for the fabrication of laser targets for high-energy electron irradiated UV laser cathode-ray tubes and homoepitaxial substrates for lasers. The technology of ZnO based UV LEDs imposes strict requirements to surface quality. Chemical-mechanical polishing delivers good surface quality but it is known that polishing of ZnO polar faces may yield different results. Surface-sensitive high-resolution X-ray diffraction (HRXRD) and X-ray reflectometry (XRR) methods have been used for studying the structure of (0001) and (000–1) polar faces of ZnO after chemical-mechanical polishing. Two double-sided polished (0001) ZnO substrates have been cut out from different hydrothermally grown ingots. The damage and density depth profiles for the Zn and O faces of the specimens have been retrieved from the X-ray diffraction curves and the specular reflection curves, respectively. Intensity distributions in the vicinity of the [0002] and [0000] reciprocal lattice sites have been taken on a D8 Discover X-ray diffractometer (Bruker-AXS, Germany) in a triple-crystal setup. For separating the coherent and incoherent scattering components, the intensity profiles have been analyzed along sections perpendicular to the diffraction vector and located at different distances from the reciprocal lattice sites. The HRXRD and XRR data have been compared with atomic force microscopy (AFM) data. The HRXRD method has revealed damaged layers at both faces of the specimens, with the layer thicknesses differing for the Zn and O faces, i.e., 5–7 nm for the Zn face and 10–11 nm for the O face. The XRR method has shown that both faces are sufficiently smooth. These results have been confirmed by AFM (RMS roughness ~ 0.23 ± 0.07 nm). However, the concentration of electrons in the superficial layers has been found to change. The layer thickness proves to be greater for the O face. We have hypothesized that the phenomena observed are caused by the difference in the chemical interaction of the Zn and O faces with the polishing agents.
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