Lan Peng, Soon-Wook Kim, F. Inoue, Teng Wang, A. Phommahaxay, P. Verdonck, A. Jourdain, J. de Vos, E. Sleeckx, H. Struyf, Andy Miller, G. Beyer, E. Beyne, Mike Soules, S. Lutter
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Development of multi-stack dielectric wafer bonding
We investigate multi-stack dielectric wafer bonding through two integration schemes, which provide different paths to realize vertical integration of multiple device layers. Key process steps are evaluated and optimized to enable void-less bonds at different bonding layers. Meanwhile, issues related to the wafer edge are discovered during the backside processing and the impact is analyzed. Finally, N=4 stacks are successfully demonstrated with high quality interfaces formed by dielectric bonding.
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