I. Gorbatyuk, S. Ostapov, S. Dremlyuzhenko, I. Rarenko, R. Zaplitnyi, I. Fodchuk, N. Popenko, I. Ivanchenko, A. Zhigalov, S. Karelin
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The growth and physical properties of HgCdMnZnTe: new material for IR photodetectors
The monocrystals of new semiconductor solid solution Hg/sub 1-x-y-z/Cd/sub x/Mn/sub y/Zn/sub z/Te with the content of manganese and zinc up to 5% have been presented. X-ray and mechanical investigations of these crystals have been carried out and their basic electrophysical parameters such as the band-gap energy, the intrinsic carriers' concentration, the impurity concentration and activation energy, the mobility of charge carriers have been determined. It is shown that a new material has the perfect crystal structure and high stability of crystal lattice. The empirical formulas for calculations of band-gap energy and intrinsic carriers' concentration of monocrystals like that are suggested. The obtained data allow announcing this material as an alternative one for infrared detectors for 3-5 /spl mu/m and 8-14 /spl mu/m spectral ranges.
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