纯厚Cu (Z=29)靶上10- 25kev电子轫致辐射的Kα,β x射线强度比与角和冲击能的关系

S. Prajapati, Bhupendra Singh, B. Singh, X. Llovet, R. Shanker
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摘要

用Si PIN光电二极管探测器研究了在反射几何模式下,在10-25个K -电子轰击多晶Cu (Z=29)纯厚靶时,特征K射线线(Kα和Kβ)相对强度比与下BS辐射相对强度比随入射角15°~ 75°的变化规律。实验结果与PENELOPE代码MC模拟结果的比较表明,在考虑的比值的角依赖性和能量依赖性的测量误差范围内,实验和理论之间的一致性很好。这些结果的细节在本工作中被提出和讨论。用Si PIN光电二极管探测器研究了在反射几何模式下,在10-25个K -电子轰击多晶Cu (Z=29)纯厚靶时,特征K射线线(Kα和Kβ)相对强度比与下BS辐射相对强度比随入射角15°~ 75°的变化规律。实验结果与PENELOPE代码MC模拟结果的比较表明,在考虑的比值的角依赖性和能量依赖性的测量误差范围内,实验和理论之间的一致性很好。这些结果的细节在本工作中被提出和讨论。
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Angular and impact energy dependence of intensity ratio of Kα,β x-rays to bremsstrahlung radiation emitted from 10-25 keV electrons incident on a pure thick Cu (Z=29) target
The variation of relative intensity ratios of the characteristic K x-ray lines, namely, Kα and Kβ to that of the underneath BS radiation as a function of incidence angle 15°-75° under bombardment of 10-25 keV-electrons on a pure thick target of polycrystalline Cu (Z=29) in the reflection geometry mode using a Si PIN photodiode detector has been studied. The comparison of experimental results with those of MC simulations using PENELOPE code shows a good agreement between experiment and theory within the error of measurements for both angular and energy dependence of the considered ratios. The details of these results are presented and discussed in this work.The variation of relative intensity ratios of the characteristic K x-ray lines, namely, Kα and Kβ to that of the underneath BS radiation as a function of incidence angle 15°-75° under bombardment of 10-25 keV-electrons on a pure thick target of polycrystalline Cu (Z=29) in the reflection geometry mode using a Si PIN photodiode detector has been studied. The comparison of experimental results with those of MC simulations using PENELOPE code shows a good agreement between experiment and theory within the error of measurements for both angular and energy dependence of the considered ratios. The details of these results are presented and discussed in this work.
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