{"title":"高压MOS晶体管I-V特性与总电离剂量效应的关系","authors":"A. Nagornov, V. Timoshenkov","doi":"10.1109/EICONRUS.2018.8317503","DOIUrl":null,"url":null,"abstract":"Theoretical and experimental research of total ionizing dose (TID) effects on high voltage (HV) MOS transistor I-V characteristics are presented. MOS transistors, manufactured in 2 different Bipolar-CMOS-DMOS (BCD) technological processes, were used in the research. HV MOS are used for power management ICs undergoing harsh radiation. Thus, devices underwent radiation to various TID levels up to 105 krad. The obtained results allowed to modify the SPICE models of transistors taking into account the changes of their characteristics. As the result, it will be possible to evaluate the effects of TID on power management IC's functional characteristics and increase their reliability in future. The results of the study show that BCD 0,5 um has better radiation resistance than BCD 1 um, but breakdown voltage of BCD 1 um is higher than that of BCD 0,5 um.","PeriodicalId":6562,"journal":{"name":"2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"36 1","pages":"1996-1999"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dependence of HV MOS transistor I-V characteristics from total ionizing dose effects\",\"authors\":\"A. Nagornov, V. Timoshenkov\",\"doi\":\"10.1109/EICONRUS.2018.8317503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Theoretical and experimental research of total ionizing dose (TID) effects on high voltage (HV) MOS transistor I-V characteristics are presented. MOS transistors, manufactured in 2 different Bipolar-CMOS-DMOS (BCD) technological processes, were used in the research. HV MOS are used for power management ICs undergoing harsh radiation. Thus, devices underwent radiation to various TID levels up to 105 krad. The obtained results allowed to modify the SPICE models of transistors taking into account the changes of their characteristics. As the result, it will be possible to evaluate the effects of TID on power management IC's functional characteristics and increase their reliability in future. The results of the study show that BCD 0,5 um has better radiation resistance than BCD 1 um, but breakdown voltage of BCD 1 um is higher than that of BCD 0,5 um.\",\"PeriodicalId\":6562,\"journal\":{\"name\":\"2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)\",\"volume\":\"36 1\",\"pages\":\"1996-1999\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EICONRUS.2018.8317503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EICONRUS.2018.8317503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dependence of HV MOS transistor I-V characteristics from total ionizing dose effects
Theoretical and experimental research of total ionizing dose (TID) effects on high voltage (HV) MOS transistor I-V characteristics are presented. MOS transistors, manufactured in 2 different Bipolar-CMOS-DMOS (BCD) technological processes, were used in the research. HV MOS are used for power management ICs undergoing harsh radiation. Thus, devices underwent radiation to various TID levels up to 105 krad. The obtained results allowed to modify the SPICE models of transistors taking into account the changes of their characteristics. As the result, it will be possible to evaluate the effects of TID on power management IC's functional characteristics and increase their reliability in future. The results of the study show that BCD 0,5 um has better radiation resistance than BCD 1 um, but breakdown voltage of BCD 1 um is higher than that of BCD 0,5 um.
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