S. Sung, J. Chawla, C. Carver, R. Chebiam, J. Clarke, C. Jezewski, T. Tronic, B. Turkot, H. Yoo
{"title":"8nm以下纳米线的金属填充和电阻简易测试车","authors":"S. Sung, J. Chawla, C. Carver, R. Chebiam, J. Clarke, C. Jezewski, T. Tronic, B. Turkot, H. Yoo","doi":"10.1109/IITC-MAM.2015.7325633","DOIUrl":null,"url":null,"abstract":"Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabricated with existing silicon patterning recipes to achieve an electrical test vehicle that can test a range of metal candidates for interconnects. The vehicle is characterized using electron microscopy and electrical measurements.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"78 1","pages":"87-90"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simple test vehicle for metal fill and resistance of sub-8nm nanowire\",\"authors\":\"S. Sung, J. Chawla, C. Carver, R. Chebiam, J. Clarke, C. Jezewski, T. Tronic, B. Turkot, H. Yoo\",\"doi\":\"10.1109/IITC-MAM.2015.7325633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabricated with existing silicon patterning recipes to achieve an electrical test vehicle that can test a range of metal candidates for interconnects. The vehicle is characterized using electron microscopy and electrical measurements.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"78 1\",\"pages\":\"87-90\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simple test vehicle for metal fill and resistance of sub-8nm nanowire
Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabricated with existing silicon patterning recipes to achieve an electrical test vehicle that can test a range of metal candidates for interconnects. The vehicle is characterized using electron microscopy and electrical measurements.
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