在SiGe/Si单结和双结太阳能电池上用于GaAsP的GaInP窗口层

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6744974

K. Schmieder, A. Gerger, Z. Pulwin, Li Wang, M. Diaz, M. Curtin, C. Ebert, Anthony Lochtefeld, R. Opila, A. Barnett

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引用次数: 9

摘要

GaAsP太阳能电池已在硅衬底上生长，并由SiGe渐变缓冲层促进。本文报道了单结p+/n GaAsP和串联n+/p GaAsP/SiGe太阳能电池，并通过评估III-V器件钝化层和优化途径来提高效率。具有不同窗厚的太阳能电池被报道用于结构和帮助指导未来研究的重点。GaAsP/SiGe on Si串联太阳能电池的ar校正效率为AM1.5G，达到20.8%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells

GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optimization. Solar cells with varying window thicknesses are reported for both structures and assist in directing focus of future research. The GaAsP/SiGe on Si tandem solar cell demonstrates a result towards AM1.5G 20.8% AR-corrected efficiency.

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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