低温合成xBiScO 3 -(1- m) batio3, x=0÷0.03铁电体系

T. Karpova, Victor Vassil, E. Vladimirova, V. Shur, V. A. Shikhova, V. Osotov, A. Nosov
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引用次数: 0

摘要

在850℃以下的温度下,采用固相反应合成法制备了xBiScO3-(1- m)BaTiO3, x=0÷0.03体系的铁电陶瓷。形成了具有四方对称的固溶体。掺杂BiScO3后,单体电池参数、介电常数最高温度及其最大值随x呈线性增加。铁电性能的室温测量表明,当x = 0.015时,铁电性能的最佳组合更为复杂。
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Low Temperature Synthesis of the xBiScO 3 -(1-х)BaTiO 3 , x=0÷0.03 Ferroelectric System
The ferroelectric ceramic of the xBiScO3-(1-х)BaTiO3, x=0÷0.03 system was prepared by solid state reaction synthesis at temperatures below 850℃. Solid solutions with tetragonal symmetry were formed. Doping with BiScO3 resulted in linear increase with x the unit cell parameters, maximum temperature of the dielectric constant and its maximum value. Room temperature measurements of ferroelectric properties revealed more complicated behavior on doping with optimum combination of ferroelectric properties for composition with x = 0.015.
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