{"title":"BST薄膜体声谐振器的线性特性研究","authors":"M. Koohi, A. Mortazawi","doi":"10.1109/IMWS-AMP.2018.8457167","DOIUrl":null,"url":null,"abstract":"Preliminary measurement results on the linearity of intrinsically switchable BST thin film bulk acoustic resonators (FBARs) are presented. Ferroelectric BST possesses electricfield-piezoelectricity, or electrostriction, which is employed to design intrinsically switchable BST FBARs. The linearity of these switchable resonators is an important factor for designing intrinsically switchable filters. The linearity of a single resonator is compared with two cascaded doubled size BST resonators. Third-order intercept point (IP3) measurement is performed, demonstrating the input IP3 improvement from 39 dBm to 43 dBm.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"On the Linearity of BST Thin Film Bulk Acoustic Resonators\",\"authors\":\"M. Koohi, A. Mortazawi\",\"doi\":\"10.1109/IMWS-AMP.2018.8457167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Preliminary measurement results on the linearity of intrinsically switchable BST thin film bulk acoustic resonators (FBARs) are presented. Ferroelectric BST possesses electricfield-piezoelectricity, or electrostriction, which is employed to design intrinsically switchable BST FBARs. The linearity of these switchable resonators is an important factor for designing intrinsically switchable filters. The linearity of a single resonator is compared with two cascaded doubled size BST resonators. Third-order intercept point (IP3) measurement is performed, demonstrating the input IP3 improvement from 39 dBm to 43 dBm.\",\"PeriodicalId\":6605,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"20 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2018.8457167\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2018.8457167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the Linearity of BST Thin Film Bulk Acoustic Resonators
Preliminary measurement results on the linearity of intrinsically switchable BST thin film bulk acoustic resonators (FBARs) are presented. Ferroelectric BST possesses electricfield-piezoelectricity, or electrostriction, which is employed to design intrinsically switchable BST FBARs. The linearity of these switchable resonators is an important factor for designing intrinsically switchable filters. The linearity of a single resonator is compared with two cascaded doubled size BST resonators. Third-order intercept point (IP3) measurement is performed, demonstrating the input IP3 improvement from 39 dBm to 43 dBm.
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