C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu
{"title":"肾上腺素BOI装置直流和交流状态下的电特性测量","authors":"C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu","doi":"10.1109/SMICND.2008.4703360","DOIUrl":null,"url":null,"abstract":"The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"18 1","pages":"169-172"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Measurements of the electrical characteristics in DC and AC regime for an epinephrine BOI device\",\"authors\":\"C. Ravariu, C. Podaru, E. Manea, D. Vizireanu, A. Bondarciuc, A. Rusu, F. Ravariu\",\"doi\":\"10.1109/SMICND.2008.4703360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"18 1\",\"pages\":\"169-172\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurements of the electrical characteristics in DC and AC regime for an epinephrine BOI device
The electrical properties of the chemical mediators at synapses level could be investigated in vitro, with some test biodevices. One of neurotransmitters, like epinephrine, placed on an insulator support and contacted with metal electrodes, provides a Biomaterials On Insulators - BOI-type, structure. The test device is inspired from the pseudo-MOS technique, frequently used in the Silicon On Insulator characterisation. The DC regime study allows some polarography experiments. A behavior like the Field Effect Transistor was also investigated in DC regime, biasing a third terminal - the gate. A gate voltage control on the current is expected. It is still linear, emphasising none inversion layer onset. The AC regime measurements of the BOI device provided some conductometry results, providing the epinphrine resistivity.