Dmitriy Utkin , Alexander Shklyev , Andrey Tsarev , Alexander Latyshev , Dmitriy Nasimov
{"title":"扫描电子光刻技术制备周期结构(2D-PhCs","authors":"Dmitriy Utkin , Alexander Shklyev , Andrey Tsarev , Alexander Latyshev , Dmitriy Nasimov","doi":"10.1016/j.phpro.2017.01.033","DOIUrl":null,"url":null,"abstract":"<div><p>The formation of the periodic structures based on Si-materials by electron beam lithography technique has been studied. We have investigated lithography processes such as designing, exposition, development, etching end others. The developed technique allows forming close-packed arrays of elements and holes in the nanometre range. This can be used to produce two-dimensional photonic crystals (2D PhCs) with emitting micro cavities (missing holes) with lateral size parameters within an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.</p></div>","PeriodicalId":20407,"journal":{"name":"Physics Procedia","volume":"86 ","pages":"Pages 127-130"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.phpro.2017.01.033","citationCount":"0","resultStr":"{\"title\":\"Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography\",\"authors\":\"Dmitriy Utkin , Alexander Shklyev , Andrey Tsarev , Alexander Latyshev , Dmitriy Nasimov\",\"doi\":\"10.1016/j.phpro.2017.01.033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The formation of the periodic structures based on Si-materials by electron beam lithography technique has been studied. We have investigated lithography processes such as designing, exposition, development, etching end others. The developed technique allows forming close-packed arrays of elements and holes in the nanometre range. This can be used to produce two-dimensional photonic crystals (2D PhCs) with emitting micro cavities (missing holes) with lateral size parameters within an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.</p></div>\",\"PeriodicalId\":20407,\"journal\":{\"name\":\"Physics Procedia\",\"volume\":\"86 \",\"pages\":\"Pages 127-130\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.phpro.2017.01.033\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics Procedia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1875389217300330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics Procedia","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1875389217300330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography
The formation of the periodic structures based on Si-materials by electron beam lithography technique has been studied. We have investigated lithography processes such as designing, exposition, development, etching end others. The developed technique allows forming close-packed arrays of elements and holes in the nanometre range. This can be used to produce two-dimensional photonic crystals (2D PhCs) with emitting micro cavities (missing holes) with lateral size parameters within an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.