ZnO纳米结构的电阻率Bloch-Gruneisen和小极化子传导模型

Reena Solanki, S. Goyal
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摘要

采用Bloch-Gruneisen [BG]模型分析了ZnO纳米结构在金属相和半导体相中随温度变化的电阻率(T),采用小极化子传导(SPC)模型进行了分析。(T)在低温状态下表现为半导体相,在180k附近表现为绝对最小值,在高温下随T线性增加。利用Bloch-Gruneisen [BG]电阻率模型估算了固有声子(ac)和高频光学声子(op)对电阻率的贡献。考虑声子即ac和op和零极限电阻率的估计电阻率贡献加上电子-电子相互作用e-e,得到总电阻率。用小极化子传导(SPC)模型讨论了半导体相在180k以下低温下的电阻率。
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Bloch-Gruneisen and small polaron conduction model of electrical resistivity of ZnO nanostructures
The temperature-dependent electrical resistivity (T) of ZnO nanostructures in metallic phase is analysed by Bloch-Gruneisen [BG] model and in semiconducting phase is analyzed by small polaron conduction (SPC) model. (T) shows semiconducting phase in low temperature regime, shows an absolute minimum near 180 K and increases linearly with T at high temperatures. The contributions to the resistivity by inherent acoustic phonons (ac) as well as high frequency optical phonons (op) were estimated using Bloch-Gruneisen [BG] model of resistivity. Estimated contribution to resistivity by considering both phonons i.e., ac and op and the zero limited resistivity are added with electronelectron interaction e-e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model at low temperatures below 180 K.
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