T.I. Mosiuk, R. Vernydub, P. Lytovchenko, Yu.B. Myroshnichenko, D. Stratilat, V. Tartachnyk, V. Shlapatska
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Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.
期刊介绍：
The journal Nuclear Physics and Atomic Energy presents the publications on Nuclear Physics, Atomic Energy, Radiation Physics, Radioecology, Engineering and Methods of Experiment. The journal includes peer-reviewed articles which are completed works containing new results of theoretical and experimental researches and are of interest for the scientists, postgraduate students, engineers and for the senior students.
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