新化学方法沉积硫化汞铬薄膜的结构、光学和热电性能

H. Patil, S. Borse, R. R. Ahire
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引用次数: 2

摘要

采用氯化汞、三氧化铬、硫脲、EDTA和氨的混合水溶液,采用简单、快速的化学浴沉积法在玻璃衬底上沉积了半导体硫化汞铬薄膜。采用EDTA作为络合剂。对制备温度、摩尔浓度、沉积时间、硫脲浓度等参数进行了优化。在65℃下改变沉积时间,制备了不同厚度的HgxCr2-xS4薄膜(X=0.2),分别采用X射线衍射、扫描电镜、紫外-可见分光光度计和TEP方法对其结构、形态、光学和电学进行了研究。薄膜在自然界中对衬底和立方结构有很强的附着力,具有择优取向(2 2 0)。光学研究表明,薄膜的直接带隙为2.13eV。热电性能表现为正信号,表明薄膜具有p型半导体性质。
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Structural, Optical and Thermoelectrical Properties of Mercury Chromium Sulfide Thin Films Deposited By Novel Chemical Route
Semiconducting mercury chromium sulfide thin films were deposited on glass substrate using simple, quick chemical bath deposition method using the mixed aqueous solution of mercury chloride, chromium trioxide, thiourea, EDTA and ammonia. The EDTA was used as the complexing agent. The preparative parameters such as temperature, molar concentration, deposition time and thiourea concentration have been optimized. Thin films of HgxCr2-xS4 (X=0.2) with different thickness were prepared by changing the deposition time at 65 0 c. The structural, morphological, optical and electrical studies were performed by X-ray diffraction, scanning electron microscopy, UV-VIS spectrophotometer and TEP methods respectively. The films are very adherent to the substrate and cubic structure in nature with the preferential orientation (2 2 0). The optical studies showed a film of direct band gap is 2.13eV. Thermoelectric properties show a positive sign exhibiting Ptype semiconducting nature of film.
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