酸性溶液中多晶硅片的各向同性刻蚀

M. Agarwal, U. Singh, R. Dusane, Ankur Soam
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引用次数: 0

摘要

在光伏技术中,基片的纹理化非常重要,因为它可以降低入射光的反射率,从而提高转换效率。由于多晶硅片存在不同的取向,各向同性刻蚀和无晶界描绘的织构是一个很大的挑战。本研究尝试用酸性溶液进行各向同性刻蚀。选择HF/HNO3/ CH3COOH的体积比,使其落在等蚀曲线的下半部分,此时溶液富含HNO3。高浓度HNO3的存在导致硅表面快速氧化,从而使HF扩散到SiO2中,从而限制了蚀刻速率。通过扫描电镜证实了多晶硅片的各向同性刻蚀。此外,反射率测量表明,在350 ~ 800 nm范围内,平均反射率从20.5%下降到8.5%。
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Isotropic etching of polycrystalline silicon wafer by acidic solution
In photovoltaic technology, texturing of base wafer has great importance since it reduces the reflectance of incident light that leads to improvement in the conversion efficiency. Due to different orientations present in polycrystalline silicon wafer an isotropic etching and the texturing without grain boundary delineation is great challenge. In this study, an attempt has been made to get isotropic etching by acidic solution. The volume ratios of HF/HNO3/ CH3COOH have been chosen in such a way that it fell in lower part of iso-etch curve where the solution is HNO3 rich. The presence of high concentration of HNO3 leads to the rapid oxidation of silicon surface and hence makes the etching rate limited through the diffusion of HF into the SiO2. This study shows the isotropic etching of poly-Si wafer which is confirmed by scanning electron microscopy. Moreover, the reflectance measurements show that the average reflectance reduces from 20.5 to 8.5 % over 350 to 800 nm range.
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