“Nb”掺杂SnO2薄膜作为TCO替代材料的优化及输运性能

R. Ramarajan, M. Kovendhan, R. Babu, K. Thangaraju, D. Joseph
{"title":"“Nb”掺杂SnO2薄膜作为TCO替代材料的优化及输运性能","authors":"R. Ramarajan, M. Kovendhan, R. Babu, K. Thangaraju, D. Joseph","doi":"10.1063/1.5113266","DOIUrl":null,"url":null,"abstract":"In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"2 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimization and transport properties of ‘Nb’ doped SnO2 thin film as an alternate TCO application\",\"authors\":\"R. Ramarajan, M. Kovendhan, R. Babu, K. Thangaraju, D. Joseph\",\"doi\":\"10.1063/1.5113266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...\",\"PeriodicalId\":10874,\"journal\":{\"name\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"volume\":\"2 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5113266\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5113266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在这项工作中,我们提出了用0.3 M和0.5 M的前驱体溶液,通过经济有效的喷雾热解方法在玻璃衬底上沉积“Nb”掺杂氧化锡(Sn1-xNbxO2, NTO)薄膜的优化结果。薄膜的x射线衍射(XRD)分析表明,薄膜具有四角形的多晶结构。0.5 M浓度的薄膜比0.3 M浓度的薄膜织构更明显,说明前驱体浓度对织构生长的影响。薄膜表面形貌呈扭曲的金属薄片状结构,其成分经元素分析证实。0.5 M的NTO薄膜在550 nm处的最大平均透过率为72%。从tauc图中估计的带隙值约为3.4 eV,与先前的报道相吻合。使用0.5 M前驱体溶液制备的薄膜的片电阻最低为30 Ω/□,电阻率为9.05×10−4 Ω cm。在Arrhenius图(300 ~ 572 K)两个不同的温度范围内,发现NTO薄膜具有两种不同的导电机制。使用0.5 M溶液沉积的薄膜具有更高的优值2.48×10−2 Ω−1,并且优于使用0.3 M前驱体溶液沉积的薄膜。在这项工作中,我们提出了用0.3 M和0.5 M的前驱体溶液,通过经济有效的喷雾热解方法在玻璃衬底上沉积“Nb”掺杂氧化锡(Sn1-xNbxO2, NTO)薄膜的优化结果。薄膜的x射线衍射(XRD)分析表明,薄膜具有四角形的多晶结构。0.5 M浓度的薄膜比0.3 M浓度的薄膜织构更明显,说明前驱体浓度对织构生长的影响。薄膜表面形貌呈扭曲的金属薄片状结构,其成分经元素分析证实。0.5 M的NTO薄膜在550 nm处的最大平均透过率为72%。从tauc图中估计的带隙值约为3.4 eV,与先前的报道相吻合。使用0.5 M前驱体溶液制备的薄膜的片电阻最低为30 Ω/□,电阻率为9.05×10−4 Ω cm。发现NTO薄膜在高温下具有两种不同的传导机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Optimization and transport properties of ‘Nb’ doped SnO2 thin film as an alternate TCO application
In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Structural, dielectric, semiconducting and optical properties of high-energy ball milled YFeO3 nano-particles Synergistic effect of rGO loading on Ni doped ZnO nanorods for enhanced photocatalytic performance The role of solvent in the formation of biodegradable polymer nanoparticles Thermal and optical properties of flake-like copper oxide nanostructure Bithiophene based red light emitting material - Photophysical and DFT studies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1