Optimization and transport properties of ‘Nb’ doped SnO2 thin film as an alternate TCO application

In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...