混合(SnS2)x (CdS)1-x薄膜的光电性质及表面x射线光电子能谱分析

MN Amroun, A. Kacha, K. Salim, M. Khadraoui
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摘要

采用喷雾热解技术,在350℃的衬底温度下合成了不同x组分(x= 1,0.8, 0.2, 0)的混合薄膜(SnS2)x(CdS)1-x。以不同组成的氯化镉(CdCl2)、氯化锡(SnCl2)和硫脲(SC(NH2)2)作为起始化学品。利用x射线光电子能谱(XPS)研究了沉积薄膜的化学结合状态。XPS研究表明,当x=0.8和x=0.2时,CdS和SnS2薄膜形成单相和混合相(SnS2)x (CdS)1-x。在o1s光谱中,对BE中不同的四种氧组分的化学状态变化进行了区分和研究。光学期望吸收容量和光电流(jph)取决于x浓度。
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Photovoltaic Properties and Surface Analysis of Mixed (SnS2)x (CdS)1-x Thin Films by X-ray Photoelectron Spectroscopy (XPS)
Mixed thin films (SnS2)x(CdS)1-x with various x compositions (x=1, 0.8, 0.2, 0) have been synthesized by spray pyrolysis technique at a substrate temperature of 350°C. Cadmium chloride (CdCl2), Tin chloride (SnCl2), and thiourea (SC(NH2)2) were used as starting chemicals at different compositions. The chemical binding state of the deposited thin films was studied by X-ray photoelectron spectroscopy (XPS). XPS studies indicate the formation of the single phase of CdS and SnS2 thin films and mixed-phase (SnS2)x (CdS)1-x for x=0.8 and x=0.2. Four components of oxygen change in chemical states which are different in BE have been distinguished and studied in the O 1s spectrum. The optical expected absorption capacity and photocurrent (jph) depend on x concentration.
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