掺钐磷酸氢钙的制备及其密度、热介电特性研究

K. Bamzai, Goldy Slathia, Bindu Raina, Rashmi R. Gupta, S. Verma, Shivani Suri, Vishal Singh
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引用次数: 0

摘要

采用室温溶液生长技术即硅胶法合成了掺杂钐的磷酸氢钙单晶。研究了pH、掺杂剂浓度、凝胶老化和上反应物浓度对生长参数的影响。找出了生长高质量单晶的最佳条件。单晶x射线衍射分析证实该晶体属于单斜晶系。通过浮选方法观察到的密度大于报道的纯磷酸氢钙的密度,从而表明掺杂剂(Sm)离子掺入了主体(CHP)的晶格中。热分析给出了两个尖锐的吸热峰,分别是部分脱水和相变引起的。电介质研究表明,居里温度仅在较高频率下才从355°C转移到370°C,从而表明材料的弛豫行为。
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Preparation of Samarium Doped Calcium Hydrogen Phosphate and Study of Its Density and Thermal and Dielectric Characteristics
Samarium doped calcium hydrogen phosphate was synthesized as single crystal by room temperature solution growth technique, namely, silica gel technique. The kinetics of the growth parameters was studied with regard to variation of pH, dopant concentration, gel ageing, and upper reactant concentration. The optimum conditions for the growth of good quality single crystal were worked out. Single crystal X-ray diffraction analysis establishes that the crystal belongs to monoclinic system. The density observed by the flotation method is greater than the density of the reported pure calcium hydrogen phosphate thereby suggesting the incorporation of the dopant (Sm) ion into the lattice of host (CHP). Thermal analysis gave two sharp endothermic peaks which are due to partial dehydration and phase transition, respectively. Dielectric studies establish a shift in the Curie temperature from 355 to 370°C only at higher frequencies thereby suggesting the relaxational behavior of the material.
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