垂直CuPd线通模互连加速度计封装WLCSP的研制

Zhaohui Chen, B. L. Lau, Zhipeng Ding, Eva Leong Ching Wai, B. Han, L. Bu, Hyun-Kee Chang, T. Chai
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引用次数: 3

摘要

针对加速度计封装等电容式MEMS器件,提出了一种采用环氧模复合材料(EMC)中CuPd线作为模内互连(TMI)的晶圆级芯片级封装(WLCSP)方案。制备的WLCSP尺寸为2mm × 2mm × 0.83 mm。硅帽设计为1mm × 2mm × 0.1 mm。采用晶片级Al/Ge共晶键合工艺对器件晶片和帽晶片进行了键合。TMI采用直径为2mil的垂直CuPd线嵌埋在EMC中。尺寸为1mm × 1mm × 0.15 mm的虚拟ASIC模具可以安装在具有微凸点的WLCSP RDL上方的UBM上。对制造的模拟试验车样品进行了MSL1、-40ºC ~ 125ºC热循环(TC)、无偏高加速应力测试(HAST)和150ºC高温储存(HST)测试。试验结果表明,所研制的试验车能够通过试验,无电气故障。成功地演示了在EMC中使用CuPd线作为TMI的WLCSP,为下一步制造具有功能加速度计的WLCSP提供了信心。
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Development of WLCSP for Accelerometer Packaging with Vertical CuPd Wire as Through Mold Interconnection (TMI)
A Wafer Level Chip Scale Packaging (WLCSP) solution with CuPd wire in epoxy mold compound (EMC) as through mold interconnection (TMI) was proposed for the capacitive MEMS such as accelerometer packaging. The size of fabricated WLCSP is 2 mm × 2 mm × 0.83 mm. Silicon cap was designed as 1 mm × 2 mm × 0.1 mm. Device wafer and cap wafer was bonded with wafer level Al/Ge eutectic bonding process. Vertical CuPd wire with diameter of 2 mils embedded in the EMC was used as the TMI. Dummy ASIC die with the size of 1 mm × 1 mm × 0.15 mm can be mounted on the UBM above the RDL of the WLCSP with micro-bumps. MSL1, -40 ºC to 125 ºC thermal cycling (TC), unbiased highly accelerated stress test (HAST) and 150 ºC high temperature storage (HST) testing was conducted on the fabricated dummy test vehicle samples. Testing results show that the fabricated test vehicle can pass the tests without electrical failure. The WLCSP with CuPd wire in EMC as TMI has been successfully demonstrated, which provides the confidence for the next step fabrication of WLCSP with functional accelerometer.
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