{"title":"在完全集成的150 GHz SiGe HBT BiCMOS技术中微波压控振荡器对衬底噪声的敏感性","authors":"J. Comeau, J. Cressler","doi":"10.1109/MWSYM.2005.1517198","DOIUrl":null,"url":null,"abstract":"This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Microwave VCO susceptibility to substrate noise in a fully-integrated 150 GHz SiGe HBT BiCMOS technology\",\"authors\":\"J. Comeau, J. Cressler\",\"doi\":\"10.1109/MWSYM.2005.1517198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1517198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1517198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave VCO susceptibility to substrate noise in a fully-integrated 150 GHz SiGe HBT BiCMOS technology
This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.
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